Relationship Between Preparation Process and Resistivity of ZnO Semiconductor Powder

Jian-qing Wu,Yi Zhong,Dong-liang Yan

DOI: https://doi.org/10.3321/j.issn:1000-565X.2007.05.021

2007-01-01

Abstract:ZnO semiconductor powders doped with Al 2O 3 were synthesized via solid synthesis. The influences of Al 2O 3 doping content, calcination temperature and soaking time on the resistivity of ZnO powders were then analyzed by means of XRD. Experimental results show that ZnAl 2O 4 spinel may exist in ZnO semiconductor powders and the electric conductivity may decrease when the doping content of Al 2O 3 overruns 0.5% in molar ratio, and that ZnO powders with low resistivity can be obtained when enough Al 3+ enter the ZnO crystal lattice at a certain calcinations temperature for a certain soaking time. However, excessive calcination temperature and soaking time may result in the formation of ZnAl 2O 4 spinel from Al 2O 3 and ZnO, which makes the replacing ratio of Al 3+ for Zn 2+ decrease and the electron scattering occur, thus increasing the resistivity of ZnO powders. It is also indicated that the synthesized ZnO powders are of a resistivity of 18 kΩ·cm when the reaction system is calcined at 1300°C for 3 h with a Al 2O 3 doping content of 0.5%.