Metal oxides as interlayer on indium tin oxide for high performance organic light-emitting diodes

Han You,Yanfeng Dai,Zhiqiang Zhang,Dongge Ma
2007-01-01
Abstract:We demonstrate extremely stable and highly efficient organic light-emitting diodes (OLEDs) based on a transition metal oxide (MoO3, V2O5, WO3) as buffer layer on indium tin oxide ( ITO). Significant features of transition metal oxide as buffer layer are that the OLEDs show low operational voltage, high electroluminescence (EL) efficiency and good stability in a wide range of metal oxide thickness. A red OLED with structure of ITO/MoO3/ N, N'-di( naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB)/ tris(8-hydroxyquinoline) aluminum (Alq(3)): Rubrene: 4-(dicy-anomethylene)-2-t-butyl-6(1, 1, 7, 7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB)/ Alq(3)/ LiF/Al shows a long lifetime of over 42 000 h at 100 cd/m(2) initial luminance, and the current efficiency and power efficiency reaches 16 cd/A and 15.3 lm/W, respectively. The turn-on voltage is 2.4 V. The significant enhancement of the EL performance is attributed to the improvement of hole injection and optical transmission.
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