Abstract:A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm/h, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of MPCVD could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

Influence of Air Plasma Treatment on the Performance of Diamond Films

Improvement in the Electrical Properties of Diamond Films for Radiation Dosimeter

Effects of plasma etching treatment on the adhesion of diamond films

THE DEVELOPMENT OF MICROWAVE PLASMA CHEMICAL VOPOR DEPOSITION FACILITIES FOR DIAMOND FILMS

Effect of Hydrogen Plasma Treatment on Secondary Electron Emission Properties of Polycrystalline Diamond Films

Effect of Input Power on the Deposition of Optical Grade Thick Diamond Film in A Dcpj Cvd Jet System

Developments in Microwave Plasma Chemical Vapor Deposition Technology for Preparing High Quality Diamond Films

Influence of Dc Bias Voltage on the Refractive-Index and Stress of Carbon-Diamond Films Deposited from A Ch4/Ar Rf Plasma

Effect of microwave plasma－etching decarburization onadhesive strength and cutting performance of CVD diamond－coated tools

Influence of O2 on Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

Improvement of Adhesive Strength and Surface Roughness of Diamond-Coated Thin Film Tools

Plasma Environment During Hot Cathode Direct Current Discharge Plasma Chemical Vapor Deposition of Diamond Films

Investigation on growth rate and quality of diamond materials in MPCVD system

Optimizing MPCVD Systems for Diamond Growth Through Advanced Microwave Transmission Theory

Effects of Deposition Parameters on Microstructure and Thermal Conductivity of Diamond Films Deposited by DC Arc Plasma Jet Chemical Vapor Deposition

Effects of the electric field at the edge of a substrate to deposit a Ø100 mm uniform diamond film in a 2.45 GHz MPCVD system

Heavily boron-doped polycrystalline diamond films: Microstructure, chemical composition investigation and plasma in-situ diagnostics

STUDY ON THE EFFECT OF PLASMA ETCHING ON THE\=BINDING PERFORMANCE OF THE DIAMOND FILM

[Optical Spectroscopy for High-Pressure Microwave Plasma Chemical Vapor Deposition of Diamond Films]

A Study of Diamond-Like Carbon Thin Films Prepared by Microwave Plasma Chemical Vapour Deposition

An innovative gas inlet design in a microwave plasma chemical vapor deposition chamber for high-quality, high-speed, and high-efficiency diamond growth