Abstract:Due to the advantages of high power density, high efficiency, and great potential in extreme temperature environments, the GaN high electron mobility transistor (HEMT) device is widely used in circuit systems at high or low temperatures. However, its electrical performance is sensitive to the ambient temperature. Therefore, it is essential to build a model that can accurately characterize the electrical performance of GaN HEMTs at different ambient temperatures, which is also essential for precise circuit design. With the analysis of experiment and theory on the GaN HEMT at different ambient temperatures, an improved model for temperature effect on the DC characteristics of the GaN HEMT is proposed based on EEHEMT model. Considering the influence of the ambient temperature on electrical properties of the GaN HEMT, such as the threshold voltage, the knee voltage, and the saturated current, the model establishes a temperature-dependent function for key parameters in the formula of the drain-source current. Through Verilog-A implementation and simulation on the ICCAP software, the improved model accurately reflects the trend of the electrical performance changes of the GaN HEMT at different ambient temperatures. To further verify the model in this work, the on-wafer measurements at different temperatures including -55, -25, 25 and 75 degrees C are carried out for GaN HEMTs with different sizes, which are developed by Nanjing Electronic Devices Institute. Compared with the measured data, the output characteristics and the transfer characteristics simulated by the proposed model are accurate in an ambient temperature range of -55-75 degrees C, with a relative fitting error less than 5%. The result shows that the improved model is of guiding significance in analyzing the direct current performance and high reliability design of circuits at different temperatures.

Temperature characteristics of AlGaN/GaN HEMTs using C-V and TLM for evaluating temperatures

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Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Modelling Temperature Dependence on AlGaN/GaN Power HEMT Device Characteristics

DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

Analytical Modelling of High Temperature Characteristics on the DC Responses for Schottky-gate AlGaN/GaN HEMT Devices

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

A Temperature Analysis of High-power AlGaN/GaN HEMTs

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

High Frequency Noise Model of AlGaN/GaN HEMTs

Research and Application of Temperature-sensitive Characteristics of Gate Parameters in GaN high electron mobility transistors

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Modeling of Temperature Effect on DC Characteristics of Micro Wave GaN Devices

Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Thermal Analysis of AlGaN/GaN HEMTs Considering Anisotropic And Inhomogeneous Thermal Conductivity