Abstract:This work examines Cu(In,Ga)Se2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency disparity between films deposited via these two methods is linked to differences in morphology and microstructure. Atomic force microscopy and scanning electron microscopy show that selenized films have rougher surfaces and poor adhesion to molybdenum back contact. Transmission electron microscopy and electron energy loss spectroscopy revealed multiple voids near the Mo layer in selenized films and a depletion of Na and Se around the voids. Residual stresses in co-evaporated films were found to be ∼1.23 GPa using wafer curvature measurements. Uniaxial compression experiments on 500 nm-diameter nanopillars carved out from co-evaporated films revealed the elastic modulus of 70.4 ± 6.5 GPa. Hertzian contact model applied to nanoindentation data on selenized films revealed the indentation modulus of 68.9 ± 12.4 GPa, which is in agreement with previous reports. This equivalence of the elastic moduli suggests that microstructural differences manifest themselves after the yield point. Typical plastic behavior with two distinct failure modes is observed in the extracted stress-strain results, with the yield strength of 640.9 ± 13.7 MPa for pillars that failed by shearing and 1100.8 ± 77.8 MPa for pillars that failed by shattering.

Ga and film microstructures of quaternary ordered defect compounds Cu(In, Ga)3Se5

Defect-induced structural disorder in tetragonal Cu(In<sub>1 <i>x</i></sub>Ga<sub><i>x</i></sub>)<sub>5</sub>Se<sub>8</sub> thin films investigated by Raman spectroscopy: the effect of Ga addition

Defect-Induced Structural Disorder In Tetragonal Cu(In1-Xgax)(5)Se-8 Thin Films Investigated By Raman Spectroscopy: The Effect Of Ga Addition

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Effect of Structure on Raman Spectra in Cu(In,Ga)3Se5 Thin Films

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Annealing effects on the structure properties of Cu(In,Ga)Se 2 thin films

Annealing Effects On The Structure Properties Of Cu(In,Ga)Se-2 Thin Films

Annealing effects on the structure properties of Cu(In,Ga)Se/sub 2/ thin films

Segregation of Ga in CuInGaSe2 Films Grown by Magnetron Sputtering and Selenization

Compositional dependence of the structural and optical properties of chalcogenide thin films

Numerical Study of the Electronic Structure, Elastic and Optical Properties of Defect Quaternary Semiconductor CuGaSnSe4

Strain And Photoluminescence Characterization Of Cubic (In,Ga)N Films Grown On Gaas(001) Substrates

Preparation and characterization of the CIGS thin films with double-graded band gap

Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation

Microstructural and Microchemical Analysis of Chalcopyrite Cu(In,Ga)Se 2 Films

Preparation and characterization of Cu(In,Ga)Se2 thin films derived by frequency magnetron sputtering

Composition Dependence Of The Raman A(1) Mode And Additional Mode In Tetragonal Cu-In-Se Thin Films

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Formation of CuInSe2 and Cu(In,Ga)Se2 films by electrodeposition and vacuum annealing treatment