Abstract:<p>The 1-period, 2-period, 4-period and 6-period InGaN/GaN quantum wells were grown by metal organic chemical vapor deposition system. Atomic force microscopy measurements and Scanning transmission electron microscopy (STEM) high-angle annular dark field (HAADF) images were used to characterize the surface morphology and cross section structures. High-resolution Transmission Electron Microscope (HRTEM) images were shot to observe defects and non-radiative recombination centers. With increasing period number, the strain accumulated and relaxed gradually, leading to the formation of high density V-shaped pits (VPs). When the number of period increased to 4, the density of VPs was high enough to connect site by site, so that island-shaped morphology appeared between adjacent VPs. All islands can be divided into three categories according to size: large, medium and small islands. Under those large islands, the InGaN layers were cut off by the VPs generated at the bottom quantum well (QW), which also cut off the migration path of indium atoms and formed the vertically arranged indium-rich (In-rich) quantum dots (QDs). Under the medium and small islands, the InGaN layer was still continuous, but significant fluctuations of composition and thickness appeared due to strain relaxation, leading to the formation of In-rich QDs. The In-rich QDs formed in the two ways can enhance the carrier localization effect, which is conducive to the improvement of internal quantum efficiency. However, the strain also accumulated with increasing the number of periods, leading to a greater degree of strain relaxation and the formation of non-radiative recombination centers (stacking faults) in In-rich QDs, which reduced the internal quantum efficiency. By controlling strain reasonably, the internal quantum efficiency is expected to be further improved.</p>

Study on the Metamorphosis of InP Self-Organized Islands Grown on GaxxIn1-x1-xP Buffer Layers

Morphologies of Epitaxial Islands on a Lattice-Misfitted Substrate

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Fabrication and Characterization of InP/air-gap Structure

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers

Growth of InxGa1−xAs Films on GaAs (100): Inserting an Ultrathin InxGa1−xAs Buffer Using a Surface Technology

The High Mobility Inn Film Grown by Mocvd with Gan Buffer Layer

Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

Influence of GaN Buffer Layer for InN Growth

Optimization of Novel Oxide-Free Insulated Gate Structure for Inp Having an Ultrathin Silicon Interface Control Layer

Studying the Mechanism of Ordered Growth of InAs Quantum Dots on GaAs/InP

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Unexpected aspects of strain relaxation and compensation in InGaAs metamorphic structures grown by MOVPE

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

Effect of different buffer layers on the quality of InGaN layers grown on Si

Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Effect Of An Aln Buffer Layer On The Epitaxial Growth Of Inn By Molecular-Beam Epitaxy