SCH-SQW Semiconductor Lasers

YX Wang,XH Wang,G Zhong,CL Liu
DOI: https://doi.org/10.1117/12.577407
2005-01-01
Abstract:In this paper We have designed a laser structure with separate confinement single quantum well (SCH-SQW)and have grown the laser structure by MOCVD. Moreover we have also fabricated broad area structure. The lasers are cleaved into bars and coated with high and low reflectivity films (approximate 95% and 5%). The measured results of the device show that its threshold current is 1.95A,The CW output power is 2W,and the peak wavelength of the device is 910nm +/- 2nm.
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