Magnetoimpedance Effects in Electrodepositing FeCoNi Thin Films Directly on N-Si(100)

Zhong, Z.Y.,Zhang, H.W.,Tang, X.L.,Shi, Y.
DOI: https://doi.org/10.1109/intmag.2005.1463624
2005-01-01
Abstract:It is expected that integration of magnetic thin films onto semiconductors will allow novel applications such as spin-dependent electronics, magnetic storage and integrated sensors. But electrodeposition magnetic thin films onto semiconductors with a thin conducting layer will introduce an additional step in process and bring new problem of current shunting. In this paper, FeCoNi magnetic alloy has been electrochemically deposited directly onto n-Si(100) electrodes, and magnetoimpedance effects in these films are investigated. FeCoNi alloy films (/spl sim/1 /spl mu/m) have been electrodeposited directly onto n-type Si (100) substrates under current control conditions. A magnetic field of /spl sim/500 Oe was applied along the film plane during deposition to induce a uniaxial in-plane magnetic anisotropy. The morphology and magnetic properties of the as-deposited CoNiFe films were studied by AFM and VSM, respectively.
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