Voltage controlled magnetic properties and perpendicular magnetic anisotropy of Co2FeSi alloy thin films

Jiaming Mei,Jagadish Kumar Galivarapu,Shangqian Wang,Buyun Huang,K. Kamala Bharathi,Ke Wang
DOI: https://doi.org/10.1007/s10854-024-13849-x
2024-11-26
Journal of Materials Science Materials in Electronics
Abstract:A series of Pt/Co 2 FeSi/MgAl 2 O 4 /Pt thin films with Co 2 FeSi thicknesses ranging from 4.5 to 6 nm are constructed to evaluate the influence of applied voltage on magnetic coercivity. It is found that the change in coercivity is around 50.04% at an applied voltage of 16 V for a 5.5 nm thin film, but increases significantly to 72.24% for a 6 nm thin film. We show evolution of perpendicular magnetic anisotropy (PMA) properties of Co 2 FeSi amorphous thin films with varying thickness. The polarization of External Hall Effect (EHE) and Magneto-Optic Kerr Effect (MOKE) loops match well with magnetic hysteresis. The EHE coefficient R s rises from 2.0 × 10 –10 to 5.5 × 10 –10 Ω cm/G with increase in thickness from 4 nm to 6.5 nm, respectively. The voltage controlled the magnetic properties of Co 2 FeSi thin films might be beneficial in the development of low-power magnetic tunnel junctions [MTJs].
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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