Preparation of Dielectric Bi2Ti2O7 Thin Film by Pulsed Laser Deposition Method and Its Optical Absorption Properties

Yuanhua Lin,Jianfei Wang,Hongcai He,Jianping Zhou,Xisong Zhou,Cewen Nan

DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.z1.020

2005-01-01

Abstract:Dielectric Bi2Ti2O7 thin films are synthesized by the pulsed laser deposition with the energy of single pulse ∼350 mJ, the pulse frequency ∼5 Hz, and suitable substrate temperature. The results indicate that the pure and homogeneous films can be obtained when the SiO2 substrate temperature was controlled in the range of 500°C-600°C. The dielectric constant is about 18.2 for the BIT-3 film sample, dielectric loss is about 0.015 and has good frequency stability. The dielectric film has good absorptivity in the range of 200-450 nm wavelength, which can be attractive for technological applications for the MEMS devices.