Low‐temperature sintering of microwave ceramics with high Qf values through LiF addition
Yuanming Lai,Hua Su,Gang Wang,Xiaoli Tang,Xin Huang,Xiaofeng Liang,Huaiwu Zhang,Yuanxun Li,Ke Huang,Xiao Renshaw Wang
DOI: https://doi.org/10.1111/jace.16086
IF: 4.186
2019-01-01
Journal of the American Ceramic Society
Abstract:Microwave ceramic with low-sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low-temperature sintering and good microwave dielectric properties, CaMgSi2O6-xLiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi2O6 (x=0) sintered at 1250 degrees C, desirable microwave dielectric properties of epsilon(r)=7.45, Qf=64800 GHz, and (f)=-34ppm/degrees C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900 degrees C when adding 2wt% LiF into CaMgSi2O6. Furthermore, a secondary phase, Li2MgSiO4, occurred at x1wt%, and the densest microstructure was obtained at the x value of similar to 2wt%. We propose that the high Qf value and the low-sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg2SiO4 ceramic, our study demonstrates that the approach of adding LiF can realize low-temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low-temperature sintering of electronic ceramics.