Abstract:In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in lateral implanted 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V−1s−1) than PDA in N2O (20 cm2V−1s−1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. On the other hand, cyclic gate bias stress measurements allowed to separate the contributions of interface states (Nit) both on the upper and bottom parts of the 4H-SiC band gap and near interface oxide traps (NIOTs) in the two oxides. In particular, it was found that NO annealing reduced the total density of charges trapped at the interface states down to 3 × 1011 cm−2 and those trapped inside the oxide down to 1 × 1011 cm−2. Electron energy loss spectroscopy demonstrated that the reduction of these traps in the NO annealed sample is due to the lower amounts of sub-stoichiometric silicon oxide (~1nm) and carbon-related defects (<1nm) at the interface, respectively. This correlation represents a further step in the comprehension of the physics of the SiO2/4H-SiC interface explaining the mobility and threshold voltage behavior of 4H-SiC MOSFETs. Furthermore, the experimental results indicate that an accurate control of SiC re-oxidation during post-deposition annealing in MOSFET technology is a key factor to improve the mobility and threshold voltage stability.

Study on near-flatband-voltage SILC in ultra-thin plasma nitrided gate oxides

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Study of gate-induced drain leakage (GIDL) effects in thin gate oxynitride NMONSFET's

Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

Improved Performance of Fully-Recessed Normally-off LPCVD SiN/GaN MISFET Using N2O Plasma Pretreatment

45-Nm Node NiSi FUSI on Nitrided Oxide Bulk CMOS Fabricated by a Novel Integration Process

Investigation of ultra-thin SiO/sub 2/ gate oxide characteristics

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Modeling of SILC based on electron and hole tunneling. I. Transient effects

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Lateral Encroachment of Ni-Silicides in the Source/Drain Regions on Ultrathin Silicon-On-Insulator

Significant Lifetime Improvement of Negative Bias Thermal Instability by Plasma Enhanced Atomic Layer Deposition SiN in Stress Memorization Technique

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Investigation on the role of hole traps under NBTI stress in PMOS device with plasma-nitrided dielectric oxide

Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal–Oxide–Semiconductor Field-Effect Transistors

Effects of Ultra-Thin Si-fin Body Widths Upon SOI PMOS FinFETs