Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

ZX Song,YA Wang,KW Xu,CL Liu

2004-01-01

Abstract:Zr-Si-N films were deposited by RF magnetron sputtering (MS) technique. A Cu film on the top of Zr-Si-N films was prepared by DC pulsed magnetron sputtering. The Cu/Zr-Si-N systems were annealed in vacuum and N-2/H(2)gas mixture at 800 degrees C, respectively. The structure of the films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and four-point probe method. The sheet resistances of the Cu/Zr-Si-N/Si contact systems annealed in N-2/H-2 gas mixture were lower than those of the specimens annealed in vacuum at 800 degrees C. The residual oxygen contamination from vacuum annealing ambience influences the sheot resistances of the Cu/Zr-Si-N/Si contact systems due to residual oxygen contamination and/or voids in Cu films. Though thermal stabilities of the Cu/Zr-Si-N/Si systems were maintained up to 800 degrees C when annealed in vacuum and N-2/H-2 gas mixture, the changes of thermal stability of specimens were noticeable. The vacuum can accelerate the oxidation and decomposition of Zr-Si-N barrier. On the contrary, N-2/H-2 gas mixture prevent from the Zr-Si-N barrier oxidation and decomposition.