Abstract:The deposition growth and annealing behaviors of Cu atoms onto Cu(0 0 1) are investigated in atomic scale by molecular dynamics (MD) simulation. The results indicate that the film grows approximately in a layer-island mode as the incident energy is from 1 to 5 eV, while surface intermixing can be significantly observed at 10 eV. The surface roughness of the film decreases with increasing the incident energy, and the film after annealing becomes smoother and more ordered. These phenomena may be attributed to the enhanced atomic mobility for higher incident energy and thermal annealing. It also indicates that atomic mixing is more significant with increasing both the incident energy and substrate temperature. In addition, the peak-to-peak distances of radial distribution function (RDF) clearly indicate that the films before and after annealing are still fcc structure except for that at the melting temperature of 1375.6 K. After annealing, the film at the melting temperature returns to fcc structure instead of amorphous. Moreover, the residual stress and Poisson ratio of the film are remarkably affected by the thermal annealing. Furthermore, the density of thin film is obviously affected by the substrate temperature and annealing process. Therefore, one can conclude that high incident energy, substrate temperature and thermal annealing could help to enhance the surface morphology and promote the microstructure of the film.

Influence of Annealing Environment and Diffusion Barrier on Surface Topography of Copper Films

Effect of Annealing Ambience on the Chemical Stability of Zr-Si-N Diffusion Barrier

Preparation and Effect of Annealing Ambient on Thermal Stability of Cu/ZrSiN/Si Structure

Influence of copper sputtering on thermal stability of ZrN diffusion barrier

Barrier layer and annealing temperature dependent microstructure evolution of nanocrystalline Cu films

High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system

Effect of Substrate Bias Voltages on the Diffusion Barrier Properties of Zr–N Films in Cu Metallization

The effect of zirconium dopant on the properties of copper films

Effect of annealing ambient and diffusion barrier on thermal stability of multilayer

Effects of preannealing on the diffusion barrier properties for ultrathin W–Si–N thin film

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Thermal Stability of Ultra Thin Zr-B-N Films As Diffusion Barrier Between Cu and Si

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Annealing Improved Ductility and Fracture Toughness of Nanocrystalline Cu Films on Flexible Substrates

Thermal Performance of Sputtered Cu Films Containing Insoluble Zr and Cr for Advanced Barrierless Cu Metallization

Application of Zr-Si Film As Diffusion Barrier in Cu Metallization

The Characterization of Sputtered Zr-Ge-N Thin Films As Diffusion Barriers Between Copper and Silicon

Effect of Annealing Ambient on the Thermal Stability of Cu/Zr42si9n49/Si Contact System

Diluting and Annealing Effects on Electromigration and Morphology of Chemical Vapor-Deposited Copper Films

Molecular dynamics investigation of deposition and annealing behaviors of Cu atoms onto Cu(001) substrate