Abstract:Based on several extended formulas to determine all frequency- and temperature-dependent distributed parameters of on-chip coupled asymmetrical and symmetrical interconnects on silicon substrates, the electromagnetic-thermal characteristics of interconnects were investigated in detail, including 1) wideband series impedances and shunt conductances, 2) conductive and dielectric attenuation constants of even(c) and odd (pi)-mode, 3) pulse waveform distortion and crosstalk, and 4) average power handling capability (APHC). In these investigations, a set of modified formulas were proposed to determine the mutual conductance and capacitance of asymmetrical configuration. Appropriate thermal models were employed to evaluate the rise in temperature of metal interconnects, where the lateral heat dissipation was taken into account for different spacings between two interconnects. Parametric calculations were performed to capture the hybrid effects of all geometric and physical parameters of metal interconnects, such as line thickness, line conductivity, and silicon conductivity. All numerical examples are believed to be useful in the design of (a)symmetrical interconnects for digital and radio frequency circuits.

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