Abstract:Optical crystals grown by Czochralski technique from a solute-rich melt usually suffer defects of melt inclusion or bubble core defects, which severely affect the optical, thermal and mechanical properties of the material. It is well known that the formation of melt inclusion or bubble core is highly related to species distribution in the growth system especially at the solidification interface and the shape of the growth interface. This paper has examined the flow pattern and solidification interface changes by changing the forced convection, e.g., crystal rotation and by changing the natural convection, e.g., inserting a horizontal disk plate. The relative effect of fluid-flow convection modes in the melt associated with crystal rotation rate is represented by a dimensionless parameter, Gr/Re-2. Increasing the rotation rate will cause the solid-liquid interface change from the convex shape to concave. When the crystal rotation rate is relatively low and natural convection is strong, Gr/Re-2 is large. In this case, the concentration of species pertinent to melt inclusion moves down along the axis of rotation. When the crystal rotation rate is increased, the value of Gr/Re-2 decreases. The precipitated composition spreads over the growing interface may then be swiped away from the growth interface by increased crystal rotation. Melt inclusion-free crystals can thus be obtained. The relationship between Gr/Re-2 and growth interface shape change is achieved by numerical simulations. The stagnant point location as a function of crystal rotation is also presented, which shows that the stagnant point moves outward by increasing Reynolds number and/or reducing Grashof number. From such understanding, the interface shape and melt inclusion position can then be controlled through control of Gr/Re-2 in the growth system. Many times, it is, however, not practical in the experiments to use a high rotation rate for optical crystal growth since high rotation rate will introduce the striation defects. A new design to reduce natural convection is then proposed to improve the effect of crystal rotation and to control the solidification interface shape. Numerical simulations have been performed to demonstrate the possibility of the new design. Results show that such design is very effective and practical to control the melt inclusion and the solidification interface shape.

Numerical Simulation on the Effect of Rotation in a Czochralski Silicon Crystal Growth with a Turbulence Model

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Comparison and application of several turbulence models in simulation of crystal growth

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Numerical simulation of combined flow in Czochralski crystal growth

Effect of crystal rotation on the instability of thermocapillary–buoyancy convection in a Czochralski model

Model and Numerical Simulation for Adsorption Phase Reaction and Crystallization

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Control Of Flow Pattern And Solidification Interface Shape In An Induction Heated Czochralski Crystal Growth System

Diameter-Controlled Czochralski Growth of Silicon Crystals

Effect of water-cooled jacket on the oxygen transport during the Czochralski silicon crystal growth process

Numerical Study of ACRT in the THM Growth of CdZnTe Crystals

Effect of Crystal Rotation on Melt Convection and Resistivity Distribution in 200 mm Floating Zone Silicon Single Crystal Growth

The Numerical Study of Marangoni Flow and Its Stability in Czochralski Crystal Growth

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Radiation-convective heat transfer from rotating crystals in the czochralski method

Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique