Pt Thin Films on Mo/Si(100) Substrate Prepared by Low Energy Ion Beam Assisted Deposition

江炳尧,蒋军,冯涛,任琮欣,张正选,宋志棠,柳襄怀,郑里平
DOI: https://doi.org/10.3321/j.issn:1001-9731.2004.06.039
2004-01-01
Abstract:Pt films were deposited on Mo/Si(100) substrate by low energy ion beam assisted deposition (IBAD). The ion/atom arrival ratios were 0.1,0.2, and 0.3, respectively. Pt films had mixed (111) and (200) orientations deposited with simultaneous 500eV Ar~+ ion bombardment at incidence angle of 0o and had highly preferred (111) orientation at incidence angle of 45o. Therefore, it is a good method to prepare highly oriented Pt(111) films on Mo/Si(100) substrate by off-normal incidence ion bombardment during film growth. The reason for the preferred orientation of Pt films was also discussed. It was considered that the orientation of Pt films did not simply depend on the channeling effects of ions, or the grain surface free energy, but it was the results of mutual competition of surface free energy and channeling effects.
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