Abstract:In this paper, the effect of the raw particle size and the annealing process on the compositions, microstructure, mechanical, thermal, and electrical properties of ZnO varistors was investigated using X-ray diffraction, infrared, X-ray photoelectron spectroscopy, scanning electron microscopy, electric field–current density, capacitance–voltage, mechanical, and thermal expansion measurements. Furthermore, the ZnO grain growth mechanism during the annealing process was discussed in detail. Results show that when the raw particle size equaled 90 nm and sintering was performed at 1100 °C for 2 h, the obtained ZnO-based varistors possessed excellent mechanical, thermal, and electrical properties; the E1mA, α, JL, and K values were 1015.3 V mm–1, 37.98, 2.45 μA cm–2, and 1.37, respectively, due to the highest bulk density and the finest uniform particle size distribution. When annealing occurred at 300 °C for three times, values of σf, KIC, E1mA, α, JL, and K reached 175.35 MPa, 1.96 MPa m1/2, 1180.2 V mm–1, 43.58, 2.15 μA cm–2, and 1.2, indicating improvements of approximately 14.7%, 4%, 16.2%, 14.7%, − 12.2%, and 11.11% compared with those of the non-annealed ZnO-based varistors, respectively, being due to the improved uniformity of grain size distribution and the re-distribution of donor Al3+ and Y3+ in the ZnO crystal and grain boundary. The annealing process lead to the transformation of Sb3+ to Sb5+ in the ZnO crystal, which could generate two additional coordination sites. The newly generated sites could combine with O2- in other crystals to increase the grain growth, resulting in clear grain growth on the surface, improved grain size distribution, and regular grain shape in the interior of ZnO-based varistors.

Preparation and characterization of low voltage ZnO film varistor

Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures

Structures, Varistor Properties, and Electrical Stability of Zno Thin Films

Synthesis of ZnO thin film for surface acoustic filter fabrication

Preparation of ZnO Thin Film Varistors with Sol-Gel Method

Preparation, Characterization and Dielectric Response of a High-Breakdown-field ZnO-based Varistor

Low Voltage ZnO Varistor Fabricated by Solution-Coating Method

Sandwich-structured ZnO-MnO2-ZnO thin film varistors prepared via magnetron sputtering

Effects of raw particle size and annealing on microstructure, electrical and mechanical behaviors of ZnO-based varistors

Study on the electrical properties and defect structures of a high voltage gradient ZnO varistor

Low Temperature Cathodic Electrodeposition of Nanocrystalline Zinc Oxide Thin Films

Microstructure and Electrical Properties of ZrO2-doped ZnO Varistor Ceramics

An ultralow concentration of Cr2O3 dopants driven lower temperature sintering ZnO‐based varistor ceramics

Ferroelectric ZnO thin film doped with V and preparation method thereof

Characterisation of Zno-Based Varistors Prepared from Nanometre Precursor Powders

Research Progress of ZnO Varistor Ceramics by Low Temperature Sintering

Sol–gel Synthesis of Y2O3-doped ZnO Thin Films Varistors and Their Electrical Properties

Enhanced voltage gradient and energy absorption capability in ZnO varistor ceramics by using nano-sized ZnO powders

Study on the Electrical Properties and the Ac Conductance Response of ZnO-Based Varistor

Effect on the Electrical Properties and Microstructure of Low Voltage ZnO Varistors Doped with Y2O3

Effects of the electrochemical deposition conditions on the properties of ZnO polycrystalline thin film