Microstructural Features, Electrical and Optical Properties of Pulsed-Sputter Deposited V2O5 Thin Films

许旻,贺德衍
DOI: https://doi.org/10.3321/j.issn:0253-2239.2004.06.006
2004-01-01
Abstract:Vanadium oxide is a promising material for cathode of thin film battery due to its high discharge capacity and good cycle performance. In the preparation of vanadium oxide film, the stoichiometry, structure and orientation of vanadium oxide can be influenced by the process parameters. The nature of vanadium oxide films can also affect their electrochemical properties. Therefore, a careful control is required to obtain high quality vanadium oxide thin films for battery application. Vanadium pentoxide (V2O5) thin films were grown onto quartz glass and silicon substrates by pulsed magnetron reactive sputter technique while sputtering power and oxygen partial pressure and substrate temperature were controlled accurately during experiment. X-ray diffraction, X-ray photoelectron spectroscopy were used to analyze the composition, phase structure, crystalline and valence state of the film. Atomic force spectroscopy was used to identify the film surface morphology. Optical transmission and reflection characteristics were measured by spectroscopy from 200 nm to 2500 nm wavelength region. The electronic performance of the film was also tested. These investigation reveals that V2O5 films have high purity, monophase and resistance change 2-order of magnitude from room to transition temperature, optical band gap Eg is about 2.46 eV.
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