Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

The Coarse Dispersion of SiC/SiO2 Fractal Interface

Characterization of Engineering Ceramics Ground Surface Based on Fractal Theory

FRACTAL STUDY ON AGGREGATION OF COLLOIDAL SILICA PARTICLES

Fractal Characterization of Nano Anisotropic Rough Surface

A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

Monte Carlo simulation of interface roughening and multifractal behaviour of rough interfaces

Surface Roughness With Fractal

Calculation and Analysis of Multifractal Spectrum of Low Silicon Sinter

Interfacial Regulation and Fracture Mechanism of Al–Si/SiC Composites Infiltrated under Super-Gravity Field

SIMULATION AND CHARACTERIZATION OF FRACTAL ROUGH SURFACES

Atomic Structural Model of the Si/SiO_2 Interface

A fractal friction model for nanoscale rough surface contact

Multi-Fractal Behaviors in Grain Size Distribution of Low Silica Sinter

Fractal Model for Surface Erosion of Cohesive Sediments

Fractal characterization of mechanical surfaces

Study on Fractal Characteristics of Grain Size Distribution of Low Silica Sinter

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

A Simulation of Dispersion of Solid on Carrier Surface

Simulation and Testing of the Radiation Performance of SiC Particles with Different Distribution Morphologies

SiC/Si's CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN SiCp/Al-Si COMPOSITES