Growth of Strain-Compensated InGaAs/GaAsP Multiple Quantum Wells by MOVPE

于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥

2003-01-01

Chinese Journal of Lasers

Abstract:InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAs multiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy (MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had been partly accommodated by the misfit dislocation formation in the strained MQW material. It led to that the full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQW structures, and there was no detectable room temperature photoluminecence (RT-PL) for the strained MQW structures. With the increasing of the P/As ratio, the separation angle between the substrate peak and the zeroth order peak of SCMQW decreased. The FWHMs of both the zeroth order satellite and RT-PL of SCMQW structures also decreased, whereas the intensity of RT-PL increased. This indicated that the quality of epitaxial layers was improved with the increasing of the strain compensation.