Characteristics of ONO in Flash Memory Device

欧文,李明,钱鹤

DOI: https://doi.org/10.3321/j.issn:0253-4177.2003.05.014

2003-01-01

Abstract:The processing technique of ONO(oxide/nitride/oxide) and analysis on characteristics of ONO are performed. A higher couple coefficient and lower operating voltage can be obtained by taking thinner bottom oxide and thicker top oxide which can obtain higher critical electric field and thinner efficient oxide.

What problem does this paper attempt to address?

Scaling Considerations of Inter-Poly Oxide-Nitride-Oxide Dielectric for High-Density Dram Applications

ZJ Ma,JY Choi,CD Lien

DOI: https://doi.org/10.1117/12.250866

1996-01-01

Abstract:ABSTRACT Highly reliable thin oxide-nitride-oxide (ONO) stacked dielectrics with oxide-equivalent thickness To;eq h1 the range of 34—68A were fabricated using conventional furnaces and an RTA machine. Rapid Thermal Nitridation(RTN) in NH3 ambient of smooth poly-Si prior to Si3N4 deposition is found to be critical for improving dielectric integrity and low-field leakage current of the ONO stacked dielectrics. This RTN process also significantly improves oxygen diffusion resistance of ultra-thin Si3N4 film. As a result, 22A LPCVD Si3N4 is adequate to sustainwet oxidation at 800°C without any oxygen diffusion through it, which results in a manufaturable and reliableToxeq45A ONO stacked dielectric. By using rugged poly-Si as a bottom electrode plus RTN process, ONO stackeddielectric can be scaled down to about To,ceq34A without any leakage or reliability problems.Keywords: Oxide/Nitride (ON), Oxide/Nitride/Oxide (ONO), Rapid Thermal Nitridation (RTN), LPCVD, DRAM. Th[TRODUCTION The decreased DRAM cell area requires a highly reliable ultra-thin dielectric to ensure a sufficient amount ofstored charge. For high-density DRAM applications, high storage capacitance, low leakage current, high breakdownvoltage, long TDDB lifetime and low infant mortality are key issues to be considered for the storage dielectric.ONO stacked dielectrics have been extensively studied for more than a decade and still remain the most practicalstorage dielectric6. As the ONO stacked dielectric is further scaled down, systematic study on how to manufacturea highly reliable and controllable ultra-thin ONO stacked dielectric continues to be necessary. In this study, 34—68AONO stacked dielectrics were fabricated by simply using the conventional LPCVD Si3N4 furnace, atmosphericoxide furnace as well as an RTA machine. Detailed characterization of the dielectrics includes I-V, C-V, TDDBmeasurements, etc.
Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping

Jing Xu,Yuanyuan Zhu,Yong Liu,Hongjun Wang,Zhaorui Zou,Hongyu Ma,Xianke Wu,Rui Xiong

DOI: https://doi.org/10.3390/nano12061029

2022-03-21

Abstract:Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbOx:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbOx:N/Pt devices, thus improving the stability of data storage. The Pt/NbOx:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (VO) + 2N clusters, which greatly reduced the ionic conductivity and total energy of the system, thus increasing the on/off ratio and stability. Moreover, because of the presence of Vo + 2N clusters, the conductive filaments grew in more localized directions, which led to a concentrated distribution of SET and RESET voltages. Thus, in situ N-doping is a novel and effective approach to optimize device performances for better information storage and logic circuit applications.
Performance Improvement of CuOx with Gradual Oxygen Concentration for Nonvolatile Memory Application

P. Zhou,H. B. Lv,M. Yin,L. Tang,Y. L. Song,T. A. Tang,Y. Y. Lin,A. Bao,A. Wu,S. Cai,H. Wu,C. Liang,M. H. Chi

DOI: https://doi.org/10.1116/1.2927922

2008-01-01

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Abstract:The authors found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. By using Al/GOC CuOx∕Cu structure, not only no forming is needed but also the endurance of switching is greatly enhanced. The device with GOC CuOx demonstrates resistance on/off ratio of greater than 100 and endurance of more than 12000cycles. The “forming-free” characteristics appear related to thinner CuO and the endurance enhancement appears related to gradual gradient of oxygen vacancies in CuOx. Thus, the thickness of CuO and distribution of oxygen (as well as vacancies) play important roles for performance improvement.
A New Low Temperature APM Cleaning Process to Improve ONO Integrity in 0.18μm Stacked-Gate EEPROM Memory

Jing Zhao,Nam Sung Kim,Junsyong Ng,Kumfai Wong,Wenyi Zhang,M. Mukhopadhyay,Dhruva Shukla

DOI: https://doi.org/10.7567/ssdm.2005.p4-8

2005-01-01

Abstract:Introduction Inter-poly dielectric thickness dominates program/erase speed and the amount of read current for a nonvolatile memory cell transistor with a stacked-gate structure. OxideNitride-Oxide (ONO) stacked film has been widely used as an inter-poly dielectric in stacked-gate flash EEPROM devices for the improvement of the reliability problem due to the degradation of data retention capability occurring during the long-term memory operation [1,2]. ONO has been reported to show high breakdown voltage and low defect density. There are many factors, which affect the quality and uniformity of ONO film during the process. In the present study, low temperature APM (LT-APM) clean (<50oC) is the 1 time introduced as the cleaning process after ONO deposition to improve the integrity of ONO film. The typical clean after ONO deposition before high voltage gate oxide growth is the normal APM (N-APM) also commonly known as SC1 clean, it is a mixture of NH4OH/H2O2/H2O at temperatures between 70 and 90oC. The purpose of the APM clean is to remove organic particles. It was reported in the literature that SC1 process has an impact on surface roughening , yield loss due to the degradation of dielectric breakdown , etching of silicon , and oxide loss . In our study, it has been found out that better ONO integrity with less surface roughness, better uniformity, hence, longer Time Dependent Dielectric Breakdown (TDDB) and stable ONO thickness have been achieved by using this LT-APM clean. Further study found out that the temperature of the APM play a dominant role in the roughness improvement, instead of the concentration of the chemical. Experimental All the devices studied in this work were fabricated using 0.18μm CMOS EEPROM technology. The ONO stack separates the floating gate and the control gate. It consists of a layer of SiO2 at the bottom, a Si3N4 layer in the centre and another SiO2-layer on top. The SiO2 is deposited as High Temperature Oxide (HTO) at 780oC. The basic process related with ONO deposition is shown in Fig 1. A Flash cell starts with tunnel oxide at the bottom, followed by the floating gate poly and ONO deposition. Subsequently, poly etch is done to grow high voltage gate oxide. A clean step is introduced before control gate poly deposition to clean the top oxide of ONO. Comparison between LT-APM and NAPM and their effects on ONO were studied. The composition, temperature and process time of N-APM and LT-APM used in this study are summarized in Table 1.
VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications

Falong Zhou,Yimao Cai,Ru Huang,Yan Li,Xiaonan Shan,Jia Liu,Ao Guo,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1016/j.sse.2007.09.027

IF: 1.916

2007-01-01

Solid-State Electronics

Abstract:A novel vertical channel dual-nitride-trapping-layer ROM (VDNROM) flash memory with oxide–nitride–oxide–nitride–oxide (ONONO) dielectrics stack is proposed and experimentally demonstrated. Compared with the conventional planar NROM cell, since the cell area of the proposed vertical structure is independent of the gate length, the VDNROM structure can relax the limitation of the gate length scaling, and can have high capability of cell area shrinking. The fabrication process of this VDNROM device is basically compatible with planar CMOS technology. The VDNROM cell can be programmed and erased by the hot carrier injection to the localized trapping dual-nitride layers, so it can achieve a four-physical-bits storage capability each cell. The reliability behaviors including the cycling endurance and the bake retention at 150°C have also been investigated and show the acceptable characteristics. The experiment results verify the VDNROM cell as a good candidate for high density applications.
Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Young Suh Song,Byung-Gook Park

DOI: https://doi.org/10.3390/mi12030328

IF: 3.4

2021-03-19

Micromachines

Abstract:For improving retention characteristics in the NOR flash array, aluminum oxide (Al2O3, alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO2/Al2O3/SiO2, which take advantage of higher permittivity and higher bandgap of Al2O3 compared to SiO2 and silicon nitride (Si3N4). By adopting the proposed tunneling layers in the NOR flash array, the threshold voltage window after 10 years from programming and erasing (P/E) was improved from 0.57 V to 4.57 V. In order to validate our proposed device structure, it is compared to another stacked-engineered structure with SiO2/Si3N4/SiO2 tunneling layers through technology computer-aided design (TCAD) simulation. In addition, to verify that our proposed structure is suitable for NOR flash array, disturbance issues are also carefully investigated. As a result, it has been demonstrated that the proposed structure can be successfully applied in NOR flash memory with significant retention improvement. Consequently, the possibility of utilizing HfO2 as a charge-trapping layer in NOR flash application is opened.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Structure and function research on FLASH memory

Yin LIU,Yu SU,Jun ZHU

DOI: https://doi.org/10.3321/j.issn:1000-0054.1999.Z1.024

1999-01-01

Abstract:This paper proposed a novel device of FLASH and introduced its manufacturing processing. Following the processing simulation, device simulation completed the writing operation based on Hot Electron Injection(HEI) and the erasing operation with F N tunneling effect. The program times were determined by variation of charge quantity on float gate with time to satisfy threshold voltage window. A current model with theory equation was established to analyze the relationship between substrate current and variation of threshold voltage with constant electrical field in ultra thin SiO 2 during the writing progress. In this case substate current can reflect variation of threshhold voltage.
An Advanced Tunnel Oxide Layer Process for 65 Nm NOR Floating-Gate Flash Memories

Shengfen Chiu,Yue Xu,Xiaoli Ji,Yiming Liao,Fuwei Wu,Feng Yan

DOI: https://doi.org/10.1088/0268-1242/30/10/105032

IF: 2.048

2015-01-01

Semiconductor Science and Technology

Abstract:An advanced tunnel oxide layer process for 65 nm NOR-type floating-gate flash memory is proposed to improve tunnel oxide quality by an additive sacrificial oxide layer growth. The sacrificial oxide layer process effectively controls the thickness variation of tunnel oxide and improves the flatness of the SiO2/Si interface across the active area. The interface traps' generation during program/erase cycling of flash cells is found to be reduced, and the reliability property is significantly improved as compared to flash cells without the sacrificial oxide layer process. The technology is applicable to further scaled floating-gate flash memories.
Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices

Lifeng Liu,Yi Hou,Bing Chen,Bin Gao,Jinfeng Kang

DOI: https://doi.org/10.7567/JJAP.54.094201

IF: 1.5

2015-01-01

Japanese Journal of Applied Physics

Abstract:A mixed-NiOx/NiOy-film-based unipolar-type resistive switching memory device is proposed and fabricated. Mixed NiOx/NiOy films were prepared by two-step film deposition followed by furnace annealing. Mixed phases of Ni2O3 and NiO coexist across the mixed NiOx/NiOy films. Compared with a single-NiOy-film-based memory device, the mixed-NiOx/NiOy-film-based memory device shows improved unipolar resistive switching performances, including high ON/OFF ratio, sufficient operation voltage window, and good endurance characteristics. The improved memory performance could be attributed to the effect of oxygen-rich NiOx with more oxygen-rich Ni2O3, which can supply sufficient oxygen ions (O2-) for resistive switching in mixed-NiOx/NiOy-film-based resistive random access memory (RRAM) devices. (C) 2015 The Japan Society of Applied Physics
Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

Yihang Du,Lin Gu,Zhuangzhuang Wang,Chun Yao,Xiaodong Mu,Dongling Zhong

DOI: https://doi.org/10.1007/s10854-023-11889-3

2024-01-21

Journal of Materials Science Materials in Electronics

Abstract:In this letter, the effects of floating gate (FG) implantation annealing for 4Xnm NOR-flash on the memory flash physical structure and electrical characteristics are investigated. The wafer of which FG implantation annealing put before pad nitride deposition suffers bin9 fail issues that result from cell-active area damage. The formation mechanism of surface defects caused by the reversible reaction of solid-state negative SiO 2 , polysilicon, and gaseous SiO under high temperature and low temperature is investigated in detail. After the process optimization, the surface defects are significantly reduced and the yield rate is greatly improved.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Effects of interfacial oxide layer formed by annealing process on WORM characteristics of Ag/CuxO/SiOx/n+–Si devices

Chih-Chieh Hsu,Sheng-Yen Hua,Xuan-Zhi Zhang,Wun-Ciang Jhang,Chao-Wen Cheng,Jung-En Tsai,Yi-Ming Wu,Yu-Sheng Chien,Wen-Chin Wu

DOI: https://doi.org/10.1016/j.jallcom.2021.162918

IF: 6.2

2022-03-01

Journal of Alloys and Compounds

Abstract:In this paper, we investigate the effects of a SiOx interfacial layer on ON/OFF current ratios, endurance characteristics and read-disturb immunities of Ag/CuxO/SiOx/n+-Si write-once-read-many-times (WORM) memories. The CuxO active layers were prepared using a sol-gel process. After coating CuxO films on n+-Si substrates, the CuxO/n+-Si samples were annealed in air at 400 ℃ and 600 ℃, respectively, to obtain a SiOx interfacial layer at the CuxO/n + -Si interfaces. The 400 ℃-annealed CuxO device shows an ON/OFF current ratio of 104. However, degradation of OFF state current (IOFF) with increasing read-pulse cycles and stress time is observed. For the 600 ℃-annealed CuxO device, stable ON and OFF state currents can be observed both in an endurance test for over 1.2 × 104 read cycles and in a read-disturb test for 2 × 104 s. Moreover, a higher ON/OFF current ratio of 107 is obtained. A rigorous retention test executed at an elevated temperature of 85 ℃ indicates that the data retention time is expected to last for 10 years. The performance improvement of the 600 ℃-annealed CuxO device is due to an increase in the thickness of the SiOx interfacial oxide layer. The mechanism for the influence of the interfacial layer on memory performance is investigated and illustrated. The OFF state current of the memory is limited by hopping and trap-assisted tunneling transport in the SiOx interfacial layer. In the ON state, conductive paths in the device cause that the carriers can easily migrate by Ohmic and space charge limited conduction.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Different Interface Role in Cuox Based Rram

J. G. Wu,P. Zhou,Y. Y. Lin,R. Huang,S. Song,Q. Zou,H. M. Wu,M. H. Chi

DOI: https://doi.org/10.1149/1.3360637

2010-01-01

ECS Transactions

Abstract:For the embedded application of resistive switching memory using CuOx films, the differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors. Al/CuxO/Cu and TaN/CuxO/Cu devices were fabricated and investigated for the memory switching characteristics, data retention and mechanism, respectively. The results show better stability, preferable endurance, and larger resistance ratio for Al electrode. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. TaON was observed for TaN/CuxO/Cu device at the anode interface by X-ray photoelectron spectroscopy and transmission electron microscopy, which is believed to play a key role in the resistance transition. The physics behind this phenomenon of reactive top-electrode is revealed. The interface filament/charges trapping dominated model is proposed to clarify the electrical characteristics of the top-electrode/oxide reactions.
Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

Hongjun Wang,Changwei Zou,Lin Zhou,CanXin Tian,Munkyo Lee,Jaechun Lee,Taewon Kang,Dejun Fu

DOI: https://doi.org/10.1002/pssr.201105146

2011-01-01

Abstract:We report reproducible bipolar resistive memory devices based on Au/ZnO nanowire networks (ZnO NWNs)/ITO, which show a high R(on)/R(off) ratio (similar to 10(4)) and narrow dispersion of set and reset threshold voltages. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and space charge limited current, respectively. The switching mechanism is confirmed in terms of the formation and rupture of conductive filaments, with oxygen vacancies localized on the ZnO NWNs surface involved in. The Au/ZnONWNs/ITO devices presented in our work show potential applications in the next generation nonvolatile memory field. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications

Falong Zhou,Yi Mao Cai,Ru Huang,Yan Li,Xiaonan Shan,Jiaquan Liu,Ao Guo,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/ESSDER.2006.307679

2007-01-01

Abstract:A novel vertical channel nonvolatile memory cell with oxide-nitride-oxide-nitride-oxide (ONONO, dual nitride trapping layers) dielectrics stack is proposed and experimentally demonstrated for the first time. Compared with the conventional planar NROM cell, since the cell area of the proposed vertical structure is independent of the gate length, the VDNROM structure can relax the limitation of the gate length scaling, and can have high capability of cell area shrinking. The fabrication process of this VDNROM device is basically compatible with planar CMOS technology. The VDNROM cell can be programmed and erased by the hot carrier injection to the localized trapping dual-nitride-layers, so it can achieve a four physical bits storage capability each cell. The reliability behaviors including the cycling endurance and the bake retention at 150 degrees C have also been investigated and show the acceptable characteristics. The experiment results verify the VDNROM cell as a good candidate for high-density applications.
Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films

Eunmi Lee,Jong Yeog Son,Lee, Eunmi

DOI: https://doi.org/10.1007/s43207-024-00379-9

IF: 2.506

2024-03-23

Journal of the Korean Ceramic Society

Abstract:Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a simple device structure and fast operation speed. However, one of the problems that must be solved in RRAM technology is that the distribution of RRAM driving voltages of formation, SET, and RESET voltages is large. In this study, we investigated the RRAM driving voltage of formation, SET, and RESET voltages for Pt/NiO/Pt, Pt/NiO 0.95 /NiO/NiO 0.95 /Pt, and Pt/NiO 0.95 /Pt RRAM capacitors affected by an oxygen-deficient NiO 0.95 layer. X-ray diffraction experiments confirmed that the NiO thin films exhibited reduced grain and worsened crystallinity as the oxygen vacancy concentration increased. In particular, increasing the oxygen vacancy concentration of the NiO thin films reduces the magnitude and the distribution of RRAM operating voltages of formation, SET, and RESET voltages. The decrease in RRAM operating voltages is due to the reduced Schottky barrier due to the increased oxygen vacancy concentration and the formation of a readily conducting filament due to the increased internal oxygen bonding. Additionally, it has been suggested that the reduced distribution of RRAM operating voltages is influenced by the formation volume of the conducting filament formed by increasing oxygen vacancy concentration.

materials science, ceramics
Enhancing nonvolatile write-once-read-many-times memory effects with SiO 2 nanoparticles sandwiched by poly(N-vinylcarbazole) layers

Xianhai Xia,Xiangmei Liu,Mingdong Yi,Quli Fan,Lianhui Wang,Qiang Tai,Weiwei Shi,Linghai Xie,Wei Huang

DOI: https://doi.org/10.1088/0022-3727/45/21/215101

2012-01-01

Abstract:A nonvolatile write-once-read-many-times (WORM) memory device based on the ITO/poly(N-vinylcarbazole) (PVK)/SiO2 nanoparticles (SiO2 NPs)/PVK/Al structure is demonstrated. By employing SiO2 NPs, the ON/OFF current ratio of the device is enlarged from 20 to 7 x 10(2) at a low voltage, and the device shows obvious negative differential resistance (NDR) phenomenon at a high electric field. Compared with the ITO/PVK/Al and ITO/PVK/PVK/Al devices, it is found that the size of the SiO2 NPs sandwiched between two PVK layers plays an important role in enhancing the reproducibility and the ON state retention time of the WORM memory device. The WORM memory mechanisms of the device are investigated on the basis of the current-voltage (I-V) characteristics and scanning electron microscopy image. Here, the strength of the NDR effect in our devices is only related to the charge defects and traps of PVK films, and it can be enlarged by embedding charge traps into the PVK films.
Performance Improvement of CuOx RRAM for Non-volatile Applications

Yinyin Lin,Peng Zhou,M.H Chi,H B. Lv,S. Song,R. Huang,J. G. Wu,H M. Wu

DOI: https://doi.org/10.1149/1.3096463

2009-01-01

ECS Transactions

Abstract:We found CuOx thin film with gradual oxygen concentration (GOC) distribution enhances resistive switching characteristics for nonvolatile memory applications. Using Al/ GOC CuOx /Cu structure, not only no forming is needed, also the endurance of switching is greatly enhanced. The device with GOC CuOx demonstrates resistance on/off ratio greater than 100, and endurance of more than 12000 cycles. A ramped pulses series (RPS) operation method is also put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of Vreset by optimizing amplitude of pulse is proposed further. Dispersion of Vreset can be minimized by using optimized Vstart of RPS. And this phenomenon agrees well with the Joule heating model that the RESET process of memory switching is associated with rupturing of filaments by Joule heating.
Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Zhong Sun,Yonggang Zhao,Min He,Lin Gu,Chao Ma,Kuijuan Jin,Linlin Wei,Jianqi Li,Nannan Luo,Qinghua Zhang,Wenhui Duan,Cewen Nan,CAS IOP,Engineering Collaboration

2016-01-01

Abstract:In contrast to the oxygen-vacancy-based model for the memristive n-type metal oxides, the coexistence of cation and anion vacancies had been suggested theoretically to be crucial to the bipolar memristive behavior of NiO. We have revealed the deterministic role of concentration surplus of cation vacancy over anion vacancy in bipolar memristive NiO, with C-AFM measuring the electrical properties, and STEM combined with EELS characterizing the ionic vacancies, giving an experimental support for the first time to the dual-defects-based model, which is of fundamental importance for the comprehensive understanding of memristor mechanisms. Furthermore, we have fabricated NiO nanodots with AAO templates, in which the intrinsically rectifying-resistive switching (IR-RS) has been observed. This is the first work studying the IR-RS in the scale of real devices, where the feasibility for selection device-free memory …
Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Szu-I Hsieh,Hung-Tse Chen,Yu-Cheng Chen,Chi-Lin Chen,Jia-Xing Lin,Ya-Chin King

DOI: https://doi.org/10.1143/jjap.45.3154

IF: 1.5

2006-04-25

Japanese Journal of Applied Physics

Abstract:In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area, so that the device mobility is created enhanced. The device performance and reliability between oxide–nitride–oxide (ONO) stacked gate dielectric devices and conventional SiO2 devices have been measured and analyzed under AC stress conditions. These results indicate that LTPS TFTs with ONO structure exhibit better reliability characteristics than conventional ones. A TFT metal–oxide–nitride–oxide–silicon (MONOS) memory device is also investigated. This MONOS device is a promising embedded non-volatile memory candidate to reduce power consumption for mobile applications.

physics, applied
Effects of Anode Materials on Resistive Characteristics of NiO Thin Films

Ze Jia,Linkai Wang,Naiwen Zhang,Tianling Ren,Juin J. Liou

DOI: https://doi.org/10.1063/1.4789523

IF: 4

2013-01-01

Applied Physics Letters

Abstract:This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.

Characteristics of ONO in Flash Memory Device

Scaling Considerations of Inter-Poly Oxide-Nitride-Oxide Dielectric for High-Density Dram Applications

Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping

Performance Improvement of CuOx with Gradual Oxygen Concentration for Nonvolatile Memory Application

A New Low Temperature APM Cleaning Process to Improve ONO Integrity in 0.18μm Stacked-Gate EEPROM Memory

VDNROM: A novel four-physical-bits/cell vertical channel dual-nitride-trapping-layers ROM for high density flash memory applications

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Structure and function research on FLASH memory

An Advanced Tunnel Oxide Layer Process for 65 Nm NOR Floating-Gate Flash Memories

Improved unipolar resistive switching characteristics of mixed-NiOx/NiOy-film-based resistive switching memory devices

Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

Effects of interfacial oxide layer formed by annealing process on WORM characteristics of Ag/CuxO/SiOx/n+–Si devices

Different Interface Role in Cuox Based Rram

Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

VDNROM: A novel four-bits-per-cell vertical channel dual-nitride-trapping- layer ROM for high density flash memory applications

Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films

Enhancing nonvolatile write-once-read-many-times memory effects with SiO 2 nanoparticles sandwiched by poly(N-vinylcarbazole) layers

Performance Improvement of CuOx RRAM for Non-volatile Applications

Investigation on the Mechanism and Application of Nanoscale NiO Memristors

Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Effects of Anode Materials on Resistive Characteristics of NiO Thin Films