Fabrication of Schottky Barrier Diodes of High Frequency Based on Thin Silicon Epilayer

张海燕,叶志镇,黄靖云,李蓓,谢靓红,赵炳辉
DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.06.012
2003-01-01
Abstract:Light-doped Si cpilayers were grown on heavy-doped n-type Si substrates by ultrahigh vacuum chemistry vapor deposition. Spreading resistance profile and atomic force micro-spectra were used to investigate the depth and surface profiles of Si epilayers. The results show that there is a sharp transitional region between n-Si epilayers and n++-Si substrates. The thickness and carrier concentration of n-Si epilayers are about 0.5μm and 1×1017 cm-3 respectively. Prototype Schottky barrier diodes with high frequency response were fabricated by using Si epilayers, which have higher cut-off frequency than the conventional Schottky barrier diodes.
What problem does this paper attempt to address?