The ebic and sr-lbic characteristics of epitaxial crystalline silicon thin film solar cells

S.Reber
DOI: https://doi.org/10.3321/j.issn:0254-0096.2003.z1.010
2003-01-01
Abstract:The recombination activities were investigated on crystal defects, especially the grain boundaries on the surface and cross section of solar cells based on the SSP substrates. The results of EBIC(electron beam induced current) scan on the cross section displays that when the recombination center is located at grain boundaries, the contrast in intragrain is low, or even no recombination activities take place. The dark contrast of the grain boundaries and intragrain defects is clearly reduced near the surface due to hydrogen passivation; the minority carrier diffusion length decreases gradually with the increase of depth perpendicular to the surface. The results of spectrally resolved light beam induced current (SR-LBIC) indicates that the diffusion length of the minority carriers is quite inhomogeneous over the whole cell area; the maximum of the diffusion length corresponds to the thickness of epilayer.
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