The Growth Mechanism of Self-Propagating High-Temperature Synthesized Si3N4

WANG Hua-Bin,ZHANG Xue-zhong,HAN Jie-cai,HE Xiao-dong,DU Shan-yi
DOI: https://doi.org/10.3969/j.issn.1005-0299.2001.01.015
IF: 1.8
2001-01-01
Materials Science and Technology
Abstract:The growth mechanism of Si 3N 4 made by self-propagating high temperature synthesis (SHS) was investigated using a gas-releasing method. The intermediate growing morphology of the colummar β-Si 3N 4 crystals by the vapor-liquid-solid (VLS) mechanism was viewed in the gas-released samples. The liquid phase reguired for the growth of β-Si 3N 4 depends upon the oxygen containing impurities in the reaction product, but not the metallic impurities in it, nor the oxygen impurity and water vapor in nitrogen. In the growth process, β-Si 3N 4 precipitates continuously from the liquid phase and the oxgyen redistributes itself between the liquid and solid phases so that the oxygen content in liquid phase gradually decreases and can not be conpensated and thus the β-Si 3N 4 crystals grow into short columns. Increasing the oxygen content in the reaction product stimalates to obtain β-Si 3N 4 columns with high height to diameter ratios. Suitable amounts of oxygen and water vapor in nitrogen are beneficial to increase the ratio of α to β-Si 3N 4 phases in the product.
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