Abstract:In the emerging process-based transistors, random telegraph noise (RTN) has become a critical reliability problem. However, the conventional method to analyze RTN properties may not be suitable for the advanced silicon-on-insulator (SOI)-based transistors, such as the fully depleted SOI (FDSOI)-based transistors. In this paper, the mechanism of RTN in a 22-nm FDSOI-based metal–oxide–semiconductor field-effect transistor (MOSFET) is discussed, and an improved approach to analyzing the relationship between the RTN time constants, the trap energy, and the trap depth of the device at cryogenic temperatures is proposed. The cryogenic measurements of RTN in a 22-nm FDSOI-based MOSFET were carried out and analyzed using the improved approach. In this approach, the quantum mechanical effects and diffuse scattering of electrons at the oxide–silicon interface are considered, and the slope of the trap potential determined by the gate voltage relation is assumed to decrease proportionally with temperature as a result of the electron distribution inside the top silicon, per the technology computer-aided design (TCAD) simulations. The fitted results of the improved approach have good consistency with the measured curves at cryogenic temperatures from 10 K to 100 K. The fitted trap depth was 0.13 nm, and the decrease in the fitted correction coefficient of the electron distribution proportionally with temperature is consistent with the aforementioned assumption.

Dynamic Characteristics of Large Amplitude Random Telegraph Signals in MOSFETs

Characteristics of Random Telegraph Signals in NMOSFETs with Ultra Narrow Channels

The Impact of Gate–image Charge on RTS Amplitudes in Ultra-Thin Gate Oxide N-Mosfets

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN P-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

Correlation of I<inf>d</inf>- and I<inf>g</inf>-random Telegraph Noise to Positive Bias Temperature Instability in Scaled High-&Amp;#x03ba;/metal Gate N-Type MOSFETs

RTS Amplitudes in Decanano N-Mosfets with Conventional and High-K Gate Stacks

Random Telegraph Signal Noise in Gate-All-Around Silicon Nanowire Transistors Featuring Coulomb-Blockade Characteristics

Anomalous Random Telegraph Noise in Nanoscale Transistors As Direct Evidence of Two Metastable States of Oxide Traps

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels

New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

Study of Random Telegraph Signals in Single-Walled Carbon Nanotube Field Effect Transistors

Switching Kinetics of Interface States in Deep Submicrometre Soi N-Mosfets

Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

The Physical Mechanisms of IG Random Telegraph Noise in Deeply Scaled Pmosfets

Impact of the Device Scaling on the Low-Frequency Noise in N-Mosfets

The Drain Bias Modulation Effect of Random Telegraph Noise in Gate-All-Around FETs for Cryogenic Applications

New Understanding of Random Telegraph Noise Amplitude in Tunnel FETs

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

Random Telegraph Noise in 30 Nm FETs with Conventional and High-κ Dielectrics