Abstract:Using first principle calculations we examine properties of (Cd,V)Te, (Cd,Cr)Te, (Hg,V)Te, and (Hg,Cr)Te relevant to the quantum anomalous Hall effect (QAHE), such as the position of V- and Cr- derived energy levels and the exchange interactions between magnetic ions. We consider CdTe and HgTe, containing 12.5% of cation-substitutional V or Cr ions in comparison to the well-known case of (Cd,Mn)Te and (Hg,Mn)Te, and examine their suitability for the fabrication of ferromagnetic barriers or ferromagnetic topological quantum wells, respectively. To account for the strong correlation of transition metal d electrons we employ hybrid functionals with different mixing parameters aHSE focusing on aHSE = 0.32, which better reproduces the experimental band gaps in HgTe, CdTe, Hg0.875Mn0.125Te, and Cd0.875Mn0.125Te. We find that Cr, like Mn, acts as an isoelectronic dopant but V can be an in-gap donor in CdTe and a resonant donor in HgTe, similar to the case of Fe in HgSe. From the magnetic point of view, Cr-doping results in a ferromagnetic phase within the general gradient approximation (GGA) but interactions become antiferromagnetic within hybrid functionals. However, (Hg,V)Te is a ferromagnet within both exchange-correlation functionals in a stark contrast to (Hg,Mn)Te for which robust antiferromagnetic coupling is found theoretically and experimentally. Furthermore, we establish that the Jahn-Teller effect is relevant only in the case of Cr-doping. Considering lower defect concentrations in HgTe-based quantum wells compared to (Bi,Sb)3Te2 layers, our results imply that HgTe quantum wells or (Cd,Hg)Te barriers containing either V or Cr show advantages over (Bi,Sb,Cr,V)3Te2-based QAHE systems but whether (i) ferromagnetic coupling will dominate in the Cr case and (ii) V will not introduce too many electrons to the quantum well is to be checked experimentally

CHARACTERIZATION AND ANALYSES OF THE CRYSTALLIZATION QUALITY AND PROPERTIES OF ACRT-VBM Hg1-xMnxTe CRYSTALS

Study on the Annealing of Cd1-xZnxTe Alloys

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Annealing modification and defect analysis of Hg2Br2 crystal

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Improvement of the Thz Response of Zn1-Xmnxte Bulk Crystals Grown by A Temperature Gradient Solution Method

High-Density Arrangement of Nanoscale Regions with Tellurium Interstitial Atoms and Silver/Copper Vacancies in AgCuTe Thermoelectric Materials

Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal

Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound

A Study of the Crystallization Kinetics of Ge-Te Amorphous Systems

Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method

Determination of structural defects in Hg1-xCdxTe multilayer materials

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

Quality improvement of ZnTe crystals by annealing in In and Zn vapor

Role of threading dislocations on the growth of HgCdTe epilayers investigated using monochromatic X-ray Bragg diffraction imaging

CdTe and HgTe doped with V, Cr, and Mn -- prospects for the quantum anomalous Hall effect

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Study of B+ -implanted HgCdTe under rapid thermal annealing

Growth and Temperature-Dependent Mechanical and Thermal Properties of One-Dimensional Chain Structure Hg 2 Br 2 Crystals for Infrared Acousto-Optic Device Application

Study of the Structural and Switching Properties of Ga 2 Te 5 Crystals

Controlling Te inclusion during direct mixed solution growth of large size CdZnTe crystal