Abstract:Single crystals of Hg0.89Mn0.11Te have been successfully grown by vertical Bridgman method at the optimized growth conditions. The X-ray rocking curve shows that the as-grown Hg1−xMnxTe possesses high perfection. Hall measurement data suggest that the electronic properties of as-grown wafers satisfy the requirement of detector manufacture. The resistivity and magnetization of the crystal were also measured by the superconducting quantum interference device (SQUID) magnetometer in the temperature ranges 5–80 and 5–300 K, respectively. The applied magnetic fields were 8.0×105, 1.6×106, 3.2×106, and 5.2×106 A m−1 for the resistivity measurements, and 8.0×103 A m−1 for magnetization measurement. The results of reciprocal susceptibility versus temperature fit Curie–Weiss law very well at the temperatures above 40 K, but deviate from the law in the range 5–40 K, which shows that the crystal possesses paramagnetic properties in the temperature range, and the paramagnetism of the crystal enhances in the lower temperature range below 40 K. The resistivity decreases with an increase of applied magnetic field in the extrinsic conduction region (T>20 K) due to the decrease of the ionization energy ε1. In the hopping conduction region (T<20 K), the increased spatial extent of the acceptor wave function under magnetic field leads to impurity conduction, therefore, the difference of resistivity under different magnetic fields increases rapidly with decreasing temperature, and the difference of that under zero magnetic field and 5.2×106 A m−1 is more than 3 orders of magnitude at 5 K.

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Defects, electronic properties, and α particle energy spectrum response of the Cd0.9Mn0.1Te: V single crystal

Cd1−xZnxTe: Growth and Characterization of Crystals for X-ray and Gamma-Ray Detectors

Growth and characterization of large-size CdMgTe single crystals doped with different in amounts

Characterization of Hgmnte Crystals Grown by Vertical Bridgman Method

Component Overpressure Growth and Characterization of High-Resistivity CdTe Crystals for Radiation Detectors

Growth of Cd1−xZnxTe Crystals with Different X Values and Their Qualities Comparison

CHARACTERIZATION AND ANALYSES OF THE CRYSTALLIZATION QUALITY AND PROPERTIES OF ACRT-VBM Hg1-xMnxTe CRYSTALS

CdMnTe in X-ray and Gamma-ray Detection: Potential Applications

A modified vertical Bridgman method for growth of high-quality Cd<sub>1−x</sub>Zn<sub>x</sub>Te crystals

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

A Modified Vertical Bridgman Method for Growth of High-Quality Cd1−xZnxTe Crystals

Investigating the influence of CdZnTe and HgCdTe material quality on detector image performance

Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers

Growth of ZnTe crystal via directional solidification method and study of its mechanical properties

Study of Zn1−xQxTe(Q=Mn, V) Crystals Grown from Te-Rich Solution As Terahertz Emitters and Sensors

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Study of Optical and Magneto-Optical Anisotropy of the Cd1−xMnxTe Crystal

Optical and Electronic Characterization on HgCdTe Materials

Extended Defects in As-grown CdZnTe

Evaluation of 5 mm-thick CdTe Detectors from the Company Acrorad