Radiation Characteristics of Cobalt SALICIDE CMOS/SOI Devices

张兴,黄如,王阳元

DOI: https://doi.org/10.3969/j.issn.1674-4926.2000.05.009

2000-01-01

Chinese Journal of Semiconductors

Abstract:The total dose radiation characteristics of CMOS/SOI devices with CoSi\-2 SALICIDE in this paper we presented. Various SOI devices, such as with or without CoSi\-2, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFET and ring oscillator. As the experimental results show, the application of Co SALICIDE on SOI CMOS circuits not only reduce the source/drain series resistance and local interconnection resistance, but also improve obviously the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay. CoSi\-2 SALICIDE technology is one of the ideal radiation hardened technology of CMOS/SOI circuits.