The Effect of Cobalt Salicide on Soicmos Radiation Characteristics

X Zhang,XM Xi,R Huang,YY Wang

DOI: https://doi.org/10.1109/icsict.1998.785789

1998-01-01

Abstract:In this paper we present the total dose radiation characterization of CMOS/SIMOX devices with CoSi2 salicide. Various SIMOX devices, such as with or without CoSi2, are applied during irradiation in order to define the better radiation hardened process for SOI MOSFET and ring oscillator. As the experimental results show, the application of Co salicide on SOI CMOS circuits not only reduce the source/drain series resistance, but also improve obviously the SOI radiation hardness properties in terms of threshold voltage shift, junction leakage and CMOS ring oscillator propagation delay.