Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Hydrogen-dependent lattice dilation in GaN

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Strain Effect on the Phonon Transport Properties of Hydrogenated 2D GaN

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Stress and Its Effect on Optical Properties of GaN Epilayers Grown on Si(111), 6H-Sic(0001), and C-Plane Sapphire

High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Plasma Assisted Molecular Beam Epitaxy Growth Mechanism of AlGaN Epilayers and Strain Relaxation on AlN Templates