Abstract:A photoelectrochemical‐type photosensor using monocrystalline p‐GaN nanowires on the Si platform is built with two primary interfaces, at which the charge separation and transport determine the photoresponses. With rational Platinum decoration, the balance of the charge carriers is tuned, making the device exhibit either positive or negative photocurrent upon different light illumination.The carrier transport dynamics at the surface/interface of semiconductors determine the electronic and optical properties of devices. Thus, precise control of their dynamic processes while understanding the nature of these characteristics is crucial for modulating device functionalities. Here, a photoelectrochemical‐type photosensor is built using monocrystalline p‐GaN nanowires on the Si platform, which unambiguously exhibits either positive or negative photocurrent upon different light illumination. Such dual‐polarity photocurrents are attributed to photogenerated‐carrier‐transport competition at two interfaces: the GaN/electrolyte and GaN/Si interface. Particularly, a rational Pt decoration successfully accelerates the carrier migration at the GaN/electrolyte interface that breaks the original balance of carrier transport. This mechanism is further elaborated by Kelvin‐probe‐force‐microscopy characterization, which intuitively reveals the impact of Pt decoration on modulating nanowires' surface band bending and the consequent carrier dynamics at the interfaces. These insights into the control of carrier dynamics shed light on achieving multi‐functional PEC devices built upon simple semiconductor architectures.

Minority electron mobility in a p-n GaN photodetector

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Photocurrent properties of high-sensitivity GaN ultraviolet photodetectors

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Low-dark-current Metal-Semiconductor-metal Ultraviolet Photodetector Fabricated on Homoepitaxial GaN

Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

Study of Photocurrent Properties of GaN Ultraviolet Photoconductor Grown on 6H-Sic Substrate

Photocurrent studies of ultraviolet detector based on GaN/6H-SiC

Current Transport Mechanisms of InGaN Metal-Insulator-semiconductor Photodetectors

Dynamics of Photoexcited Carriers in AlxGa1−xN/GaN Double Heterostructures

Investigation on minority carrier lifetime, diffusion length and recombination mechanism of Mg-doped GaN grown by MOCVD

Effects of Impurity Band on Multiphoton Photocurrent in GaN and InGaN Photodetectors

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor

Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

Yellow luminescence band defect related photocurrent instability of GaN p-i-n ultraviolet photodetectors

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene

Balancing the Photo‐Induced Carrier Transport Behavior at Two Semiconductor Interfaces for Dual‐Polarity Photodetection