Abstract:We present the results of Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and atomic force microscopy (AFM) analysis of sulfur-passivating layers on the GaAs (100) surface. The GaAs surfaces were passivated with both inorganic [(NH4)(2)S-x] and organic [octadecylthiol (ODT)] S-based compounds. We prepared the inorganic sulfur-passivated GaAs(100) surfaces with a wet chemical treatment using (NH4)(2)S solution. This was followed by thermal annealing of the treated sample in an ultrahigh vacuum (UHV). After ex-situ and in-situ treatments, the surface resulted in a (2 x 1) LEED pattern. The LEED data (I-E curves) were recorded and compared with dynamical LEED calculations for different structural models for the sulfur-passivated GaAs (100) surface. The results showed that the sulfur-passivated (2 x 1) surface structure is an arsenic-sulfur dimer on a Ga-terminated substrate. The ex-situ AFM results also revealed a (2 x 1) structure for the inorganic passivation and a very smooth surface for the organic ODT in the ethanol-treated sample. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

The Role Of S Passivation On Magnetic Properties Of Fe Overlayers Grown On Gaas(100)

Growth and magnetic properties of Fe overlayer on S-passivated GaAs substrate

Effect of sulfur passivation on electronic structure and magnetism of Fe/GaAs (100)

Study of iron overlayer on sulphur passivated GaAs(100) by synchrotron radiation photoemission

A Novel Sulfur-Passivation Method and Magnetic Overlayers on Passivated III–V Semiconductor Surface

The Progress of Sr Study on the Passivation of Semiconductor Surface in Nsrl

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

The chemistry, structure and stability of CH3CSNH2 passivated GaAs(100) surfaces

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

Photoemission study of S-passivated GaP (100) and interface of Gd/S-GaP (100) with synchrotron radiation

Interface Formation Between Co With S-Passivated Gaas(100)

Sulfurized Passivation of GaAs(100) Surfaces

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

Superparamagnetic behavior in Fe ultrathin films on GaN(0001)

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

Studies of Interface Formation Between Co with GaAs(100) and S-passivated GaAs(100)

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Study of HREELS and XPS on sulfide passivated GaAs (100) surface