Abstract:For bottom spin-valves of $\mathrm{NiO}∕\mathrm{Fe}∕\mathrm{Cu}∕{\mathrm{Gd}}_{1\ensuremath{-}x}{\mathrm{Co}}_{x}$, giant magnetoresistance has been measured as a function of thickness and composition of $\mathrm{GdCo}$ layers as well as temperature. For all spin-valves involved here, the giant magnetoresistance has been attributed to contributions of spin-dependent scattering at interfaces and in bulk. The interfacial contribution produces positive giant magnetoresistance ratio for various compositions of $\mathrm{GdCo}$ alloys. However, the bulk contribution produces negative one for the Co contents from $50\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$ to a critical value ${x}_{\mathrm{C}}(R)$ (between $69\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$ and $77\phantom{\rule{0.3em}{0ex}}\mathrm{at}.\phantom{\rule{0.2em}{0ex}}%$) and positive one for higher Co contents. It is suggested that the interfacial asymmetric factor of spin-dependent scattering is larger than 1.0 at the $\mathrm{Cu}∕\mathrm{GdCo}$ for various alloy compositions of $\mathrm{GdCo}$ and that the bulk asymmetric factor in $\mathrm{GdCo}$ layer is smaller and larger than 1.0 for Co contents below and above ${x}_{\mathrm{C}}(R)$, respectively. For spin valves with Co contents below and/or above ${x}_{\mathrm{C}}(R)$, the giant magnetoresistance ratio varies nonmonotonically and/or monotonically as a function of the $\mathrm{GdCo}$ layer thickness (temperature) for a specific temperature (a specific $\mathrm{GdCo}$ layer thickness), respectively. The change of the bulk asymmetric factor in the $\mathrm{GdCo}$ layer with the alloy composition can be attributed to the variation of either the spin alignment of Co and Gd atoms or the spin polarization of the $\mathrm{GdCo}$ layer.

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Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

High Giant Magnetoresistance and Thermal Annealing Effects in Perpendicular Magnetic [Co/ni]n-Based Spin Valves

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

Study on influence factors of GMR effect in NiO/NiFeCo/Cu/NiFeCo spin-valves

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Tailoring of magnetic properties of giant magnetoresistance spin valves via insertion of ultrathin non-magnetic spacers between pinned and pinning layers

Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads

Manipulating the interlayer exchange coupling in CoFeB/Ta/CoFeB multilayered spin valve for magnonic applications

Giant Magnetoresistance Enhancement In Spin Valves With Nano-Oxide Layers

Interlayer Magnetostatic Coupling Induced Co Layer Coercivity Enhancement and Exchange Bias in [pd/co]/cu/co Spin Valves

All-voltage control of Giant Magnetoresistance

Magnetoresistive Behavior and Magnetization Reversal of NiFe/Cu/CoFe/IrMn Spin Valve GMRs in Nanoscale

High-sensitivity GMR with low coercivity in top-IrMn spin-valves

ELECTRIC-FIELD CONTROL OF GIANT MAGNETORESISTANCE IN SPIN-VALVES

Giant Magnetoresistance And Tunnel Magnetoresistance Effects In Fecogd-Based Spin Valves And Magnetic Tunnel Junctions

Dependence of GMR on NiFe Layer Thickness in High Sensitive Simple Spin Valve

Inverse Giant Magnetoresistance Infe∕cu∕gd1−xcoxspin-Valves

Structure Optimization and Thermal Annealing Effect of IrMn-based Bottom Spin Valves

Enhanced Difference in Switching Fields for Perpendicular Magnetic Spin Valves with A Composite [co/ni](n)/tbco Reference Layer