MOVPE growth and characterization of silicon doped GaN

Xianglin Liu,Lianshan Wang,DaCheng Lu,Du Wang,Xiaohui Wang,Lanying Lin

1999-01-01

Abstract:Silicon doped GaN films on sapphire have been grown by metallorganic vapor phase epitaxy. It is found that the electron concentration of the films saturates at high dosage of silane dopant. The electrical, optical, crystalline and morphological properties of the films have been studied.

What problem does this paper attempt to address?

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Lianshan Wang,Xianglin Liu,Yude Zan,Du Wang,Da-Cheng Lu,Zhanguo Wang,Yutian Wang,Lisen Cheng,Ze Zhang

DOI: https://doi.org/10.1016/S0022-0248(98)00514-4

IF: 1.8

1998-01-01

Journal of Crystal Growth

Abstract:Single crystal GaN films have been grown on to an Al2O3 coated (001)Si substrate in a horizontal-type low-pressure MOVPE system. A thin Al2O3 layer is an intermediate layer for the growth of single crystal GaN on to Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide was not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN overlayer as studied by transmission electron microscopy. Double crystal X-ray diffraction showed that the linewidth of (0002) peak of the X-ray rocking curve of the 1.3μm sample was 54arcmin and the films had heavy mosaic structures. A near band edge peaking at 3.4eV at room temperature was observed by photoluminescence spectroscopy.
GaN growth on Si and Si-SiO2-Si compliant substrates

Junxi Wang,Xiaoliang Wang,Hongxin Liu,Guoxin Hu,Jianping Li,Jinmin Li,Yiping Zeng

2004-01-01

Abstract:GaN films are deposited on Si and Si-SiO2-Si compliant substrates by MBE (molecular beam epitaxy) technique and compared optical properties and residual strain with that of the obtained films on the two-kind of substrates. Investigation of the surface morphology shows that crack-free GaN epilayers are obtained on compliant substrates with a value of RM (Croot mean square) of 0.6 nm. Photoluminescence measurements indicate a great reduce of the residual strain and impurity density in GaN films grown on compliant substrates compared with those on Si substrates. The results show that Si-SiO2-Si compliant substrates are promising as a substrate for GaN material growth.
Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Ting Liang,Jianjun Tang,Jijun Xiong,Yong Wang,Chenyang Xue,Xujun Yang,Wendong Zhang

DOI: https://doi.org/10.1016/j.vacuum.2010.01.054

2011-01-01

Abstract:Hexagonal-GaN heteroepitaxy layers have been grown on Si(111)substrate by MOCVD.The structure,morphology and optical properties of GaN epilayer is analyzed and characterized by various analysis method such as optical microscope,AFM,SEM,X-ray diffraction(XRD),and Raman spectra,etc.Test results show that the crystal reveals the wurtzite structure with the(0002)crystal orientation and the heteroepitaxial growth of GaN has good single crystal quality,good directing property,smooth surface without crack.The Raman peaks of E2(high)and A1(LO)phonon mode have red shift according to relaxed GaN,which might be related to the tensile stress in GaN layer.But the AO phonon mode of Si have blue shift as its eigen frequency which shows the Si substrate suffered compressive stress.
Growth and Characterization of Si-doped Β-Ga2o3 Films by Pulsed Laser Deposition

C. X. Xu,H. Liu,X. H. Pan,Z. Z. Ye

DOI: https://doi.org/10.1016/j.optmat.2020.110145

IF: 3.754

2020-01-01

Optical Materials

Abstract:((2) over bar 01) oriented Si-doped beta-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 x 10(18) cm(-3) and a Hall mobility of 0.07 cm(2) V(1)s(1) have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped beta-Ga2O3 films.
Growth processes of GaN buffer layer

Xianglin Liu,Lianshan Wang,DaCheng Lu,Xiaohui Wang,Du Wang,Lanying Lin

IF: 10.319

1999-01-01

Journal of Materials Science and Technology

Abstract:The growth rate GaN buffer layer on sapphire grown by metallorganic vapor phase epitaxy (MOVPE) over the temperature between 500°C to 600°C is studied. The growth rate as measured using laser reflectance is found to be dependent on growth temperature, the molar flow rate of the sources (in this case, trimethylgallium or ammonia) and the input mode of sources into the two-channel reactor. A model on the growth process of GaN buffer layer by MOVPE is proposed to interpret the experimental evidence.
Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

L LIANG,Z RONG,X ZILI,Z YU,X XIANGQIAN,L BIN,Z JIANJUN,C LIN,Y HUIQIANG,H PING

DOI: https://doi.org/10.1016/S1002-0721(07)60502-X

IF: 4.632

2008-01-01

Journal of Rare Earths

Abstract:The electrical, structure and optical properties of Si-doped Al0.5Ga0.5N epilayers with a thickness of about 0.5 μ grown on sapphire substrates using an AIN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al0.5Ga0.5N was achieved achieved with an electron concentration of 1.2 × 1019 cm−3 and mobility of 12 cm2·Vs−1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al0.5Ga0.5N epilayers with various SiH4 flow rates was studied by X-ray diffraction (XRD) and Raman scattering spectrum. With increasing SiH4 flow rate, the decrease of the lattice constant of c and the frequency of E2 phonon implies gradual relaxation of the stress in the epilayers.
A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Wenliang Wang,Haiyan Wang,Weijia Yang,Yunnong Zhu,Guoqiang Li

DOI: https://doi.org/10.1038/srep24448

IF: 4.6

2016-04-22

Scientific Reports

Abstract:AbstractHigh-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

multidisciplinary sciences
Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

CB Fang,XL Wang,GX Hu,JX Wang,CM Wang,JM Li

IF: 4.632

2006-01-01

Journal of Rare Earths

Abstract:High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Baiyin Liu,Fujun Xu,Jiaming Wang,Jing Lang,Liubing Wang,Xuzhou Fang,Xuelin Yang,Xiangning Kang,Xinqiang Wang,Zhixin Qin,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1016/j.spmi.2021.107141

2022-01-01

Micro and Nanostructures

Abstract:Correlation between electrical properties and growth dynamics for Si-doped AlGaN with Al mole fraction above 60% has been investigated. It is found that the electron concentration decreases significantly when decreasing the growth rate, while the electron mobility experiences a non-monotonic process of increasing at first and then decreasing. Combination of secondary ion mass spectroscopy and panchromatic cathodoluminescence results, reveals that the evolution of electrical properties mainly originates from compensation of III vacancy (V-III) to Si dopant, making V-III-nSi complexes, i.e., the concentrations of V-III-nSi complexes increase with decreasing the growth rate, implying high growth rate principle is vital for n-AlGaN.
Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Wenliang Wang,Weijia Yang,Yunhao Lin,Shizhong Zhou,Guoqiang Li

DOI: https://doi.org/10.1038/srep16453

IF: 4.6

2015-01-01

Scientific Reports

Abstract:2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(10 2) X-ray rocking curves of 0.7° and 0.8°, respectively and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.
Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Xiaoyong Gao,Songyou Wang,Jing Li,Yuxiang Zheng,Rongjun Zhang,Peng Zhou,Yuemei Yang,Liangyao Chen

DOI: https://doi.org/10.3938/jkps.44.765

2004-01-01

Journal of the Korean Physical Society

Abstract:Structural and optical properties of GaN grown on (0001)-oriented sapphire substrates by low pressure metal-organic chemical vapor deposition were investigated by XRD, ellipsometry, PL and other optical methods. The thickness of the GaN sample was about 1.5 mum. Seen by XRD, the existence of the strong (0002) diffraction peak with a very narrow FWHM value of 0.1 and the high order GaN (0004) diffraction peak confirms a good quality of the GaN films grown on sapphire substrate by using a multi-step growth procedure. Optical transparency of the GaN samples induces strong interference oscillations below E-0 (3.44eV) in the measured dielectric function spectra and reflective spectra. In low temperature PL spectra, the red shift of the peak and decreased intensity of PL are visible. The former can be attributed to the involvement of band tail states, and the latter can be accounted for by the decreasing non-radiative recombination lifetime.
Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

王书运,孙振翠,曹文田,薛成山

DOI: https://doi.org/10.3969/j.issn.1004-4957.2004.06.018

2004-01-01

Abstract:GaN films were grown through nitriding the Ga 2 O 3 films formed on the Ga-diffused Si(111)subˉstrate by r.f.magnetron sputtering.X-ray diffraction(XRD),scanning electron microscopy(SEM),selected area electron diffraction(SAED),X-ray photoelectron spectroscopy(XPS)and photoluminescence(PL)were employed to analyze the structure,surface morphology and component and optical emission properties of the prepared samples.The XRD,SAED and XPS patterns indicated that the growing films were of hexagonal polyˉcrystalline GaN films and the SEMimage showed that the films were composed of uniform GaN nanoparticals with diameters of50～100nm.The PLpeak was at344nmwhich was blue shifted fromthat of the bulk GaN by21nm.This phenomenon might be attributed to the recombination of free-carrier.
Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Shenyu Xu,Xiong Zhang,Xuguang Luo,Ruiting Fang,Jiadong Lyu,Mu-Jen Lai,Guohua Hu

DOI: https://doi.org/10.1016/j.mssp.2023.107447

IF: 4.1

2023-06-15

Materials Science in Semiconductor Processing

Abstract:The N-polar Si-doped n-type AlGaN epi-layer with an Al composition up to 54% was successfully grown on vicinal c-plane sapphire substrates by metal-organic chemical vapor deposition technology. High-resolution X-ray diffraction, atomic force microscopy, and Hall effect measurement were used to evaluate the influence of the use of vicinal sapphire substrate on the crystalline quality, the surface morphology, and the electrical property of the N-polar Si-doped AlGaN epi-layer, respectively. The characterization results reveal that the use of an optimized vicinal sapphire substrate plays a vital role in the improvements in the crystalline quality, the surface morphology, and the electrical property for the N-polar Si-doped n-type AlGaN epi-layers. In fact, a relatively smooth surface morphology with a root-mean-square value as small as 17.3 nm, an electron concentration of 1.9 × 1019 cm−3, and an electron mobility of 23.5 cm2 V−1 S−1 were achieved with the N-polar Si-doped n-type AlGaN epi-layer sample grown on a 1° mis-oriented c-plane sapphire substrate in this study.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Zhe Chuan Feng,Jiamin Liu,Deng Xie,Manika Tun Nafisa,Chuanwei Zhang,Lingyu Wan,Beibei Jiang,Hao-Hsiung Lin,Zhi-Ren Qiu,Weijie Lu,Benjamin Klein,Ian T. Ferguson,Shiyuan Liu

DOI: https://doi.org/10.3390/ma17122921

IF: 3.4

2024-06-15

Materials

Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Xu Zhihao,Zhang Jincheng,Duan Huantao,Zhang Zhongfen,Zhu Qingwei,Xu Hao,Hao Yue

DOI: https://doi.org/10.1088/1674-4926/30/12/123003

2009-01-01

Journal of Semiconductors

Abstract:The stresses,structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied.It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples.But for higher doping samples,as the Si doping concentration increases,the inplane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities.Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration.This phenomenon is attributed to the interaction between various scattering process.It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples.
Properties of low-temperature-deposited GaN buffer layers

Xianglin Liu,Lianshan Wang,DaCheng Lu,Xiaohui Wang,Du Wang,Lanying Lin

1999-01-01

Abstract:Low-temperature-deposited GaN buffer layers with different thicknesses, as-grown or annealed, and GaN epilayers on the buffer layers have been grown by metallorganic vapor phase epitaxy (MOVPE). The crystallographic, morphologic and optical properties of the GaN buffer layers as well as the influence of these properties on the GaN epilayers have been studied. A model is proposed to interpret the most suitable thickness of GaN buffer layer for GaN epilayer on sapphire grown by MOVPE.
Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Guoqiang Li,Shao-Ju Shih

DOI: https://doi.org/10.1109/INEC.2010.5424954

2010-01-01

Abstract:GaN and related group III nitrides have been attracting enormous attention due to their successful applications in light-emitting diodes (LEDs), laser diodes (LDs), field effect transistors (FETs), photo-detectors (PDs), high power devices, etc. This work reports on the epitaxial growth of high quality m-plane GaN films on LaAlO3 (001) substrates by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to monitor the growth condition during the whole course. X-ray diffraction rocking curves are used to determine crystallinity of as-grown GaN films and atomic force microscopy are utilized for surface morphology. The interface between GaN films and the substrates as well as the films' microstructure are characterized by transmission electron microscopy.
Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Quanzhong Jiang,Duncan W E Allsopp,Chris R Bowen

DOI: https://doi.org/10.1088/1361-6463/aa60a0

2017-03-16

Abstract:Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

physics, applied
Growth of High Al Content AlGaN Epilayer by MOCVD

Xiaoyan Wang,Xiaoliang Wang,Guoxin Hu,Baozhu Wang,Jianping Li,Hongling Xiao,Junxi Wang,Hongxin Liu,Yiping Zeng,Jinmin Li

DOI: https://doi.org/10.3321/j.issn:0253-4177.2007.z1.047

2007-01-01

Abstract:High Al content AlGaN films are grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) using AlN/AlGaN superlattices. Transmission measurements combined with double-crystal X-ray diffraction (DCXRD) and scanning electron microscopy (SEM) are used to characterize the AlGaN epilayers. The optical properties, crystal quality and surface morphology of AlGaN epilayers deposited at 1.33 × 104 and 0.66 × 104 Pa are also compared.
A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

Gemeng Huang,Maorong Feng,Chen Yang,Shengmin Li,Ming Ma,Song Xia,Shiji Fan,Zhenrong Li

DOI: https://doi.org/10.1016/j.mssp.2022.106565

IF: 4.1

2022-01-01

Materials Science in Semiconductor Processing

Abstract:The liquid epitaxial growth process on the HVPE-GaN seed of GaN crystal was investigated using the Na–Li–Ca flux method. The phase structure and morphology of as-grown GaN crystals were characterized by X-ray diffraction (XRD) and the scanning electron microscope (SEM), respectively. Under the growth time of 70h, a large area of dissolution morphology could be observed accompanied by a decrease in the thickness of the HVPE-GaN seed. At the bottom of the crucible, the thinning of the seed crystal thickness was the most obvious. For the growth time of 150h, there were two kinds of appearances along the height direction, presenting gathered ridges in the upper part and cellular organizations in the middle and bottom parts. For 420h, the as-grown crystal presented a typical hexagonal layered morphology and the side face developed outward forming regular hexagonal crystallographic planes. With prolonging time from 150h to 420h, the LPE growth shifted from non-equilibrium growth mode with an unstable cellular growth surface morphology to near-equilibrium growth mode with a typical hexagonal layered growth morphology. The thickness of as-grown crystal showed a decrease trend from the gas-liquid interface to the bottom of crucible. To get near-equilibrium growth mode for the whole crystal plate in Na-flux method, the promotion of N dissolving, GaN growth unit diffusion is the key issue.

MOVPE growth and characterization of silicon doped GaN

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

GaN growth on Si and Si-SiO2-Si compliant substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth and Characterization of Si-doped Β-Ga2o3 Films by Pulsed Laser Deposition

Growth processes of GaN buffer layer

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Improvements in characteristics of N-polar Si-doped AlGaN epi-layer grown on mis-oriented c-plane sapphire substrate

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Properties of low-temperature-deposited GaN buffer layers

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Growth of High Al Content AlGaN Epilayer by MOCVD

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux