Ferroelectric Bi4Ti3O12 thin films prepared by metallorganic decomposition

Xusheng Wang,Tongqing Yang,Zhitang Song,Liangying Zhang,Xi Yao

1998-01-01

Abstract:Ferroelectric Bi4Ti3O12 thin films were prepared by metallorganic decomposition technique using tetrabyl titanate and bismuth nitrate, and their structural and electrical properties were characterized by XRD and electric analyzers. Polycrystalline Bi4Ti3O12 thin films were obtained at relatively low annealing temperatures of 500-600 °C. With the increase of annealing temperature, lattice constants a and b were decreased but c was non-changed. The dielectric constant of Bi4Ti3O12 thin films was decreased with the increase of frequency, and the loss tangent was changed with frequency is shape of basin (bottom of 103-104 Hz). The dielectric constant was increased with the increase of annealing temperature, which resulted from grain size and grain boundary. The typical values of dielectric constant and loss tangent were 124 and 0.02 respectively. Better hysteresis loops was performed for the Bi4Ti3O12 thin films annealed above 550 °C. The typical parameters for Bi4Ti3O12 thin films annealed at 550 °C were Ec=127 kV/cm, Ps=11.1 μC/cm2 and Pr=8.33 μC/cm2. The DC resistivity and breakdown voltage were 1010-1012 ω·cm and 15-25 V respectively.