Ferroelectric Properties of Sm‐doped Bi4Ti3O12 Thin Films

M Chen,ZL Liu,Y Wang,KL Yao
DOI: https://doi.org/10.1002/pssa.200420016
2005-01-01
Abstract:Sm-doped bismuth titanate and random oriented Bi-4,Sm,Ti3O12 (BST) thin films were fabricated on Pt/Ti/SiO2/Si substrates using a pulsed laser deposition method. The structures and the ferroelectric properties of the films were investigated. Sm doping leads to a marked improvement in the remanent polarization (P-r) and the coercive field (E-c). At an applied electric field of 100 kV/cm, P-r and E, of a BST (x = 0.8) film annealed at 650 degrees C are 20.5 mu C/cm(2) and 60 kV/cm, respectively. However, after 3 x 10 switching cycles, 20 % degradation of 2P, is observed in the film. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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