Application of the proportional difference time analysis to study carrier generation rate in MOS structures

Changhua Tan,Mingzhen Xu,Yandong He
DOI: https://doi.org/10.1016/S0038-1101(97)00268-2
IF: 1.916
1998-01-01
Solid-State Electronics
Abstract:A modified Zerbst generation rate of the pulse response of silicon MOS structure is presented which takes into account the depletion width-dependent surface generation and bulk diffusion components and is used to explain the experimentally observed generation rate nonlinearity during the final stages of the approach to equilibrium. An improved spectral analysis method has been developed for separating and determining generation lifetime and surface generation velocity from measured effective generation parameters. Values of effective generation parameters are shown to agree well with those obtained by the Zerbst-Heiman-Schroder method. (C) 1998 Elsevier Science Ltd. All rights reserved.
What problem does this paper attempt to address?