Abstract:In this study, ultrafast dynamics of photoexcited carriers in an intrinsic CdTe film are investigated deeply and systematically as a function of carrier density and excess energy using femtosecond-resolved pump–probe transient differential transmission spectroscopy. A dynamic model is developed based on an interband transition absorption model in direct bandgap semiconductors by introducing the dynamics of thermalization, cooling and recombination of photoexcited carriers into the interband transition absorption model. Then, the model is used to best fit the measured ultrafast dynamics to retrieve the initial temperature of thermalized electrons and time constants of the thermalization, cooling and recombination dynamic processes as a function of carrier density and excess energy. The increase with carrier density and the decrease with excess energy of thermalization time constant reveal that thermalization process of photoexcited carriers is dominated by carrier-phonon scatterings. We find for the first time that cooling of thermalized carriers depend strongly on carrier density and excess energy, and cooling time constant varies in a wide range from 0.2 to 5 ps. It is also found that carrier recombination in the intrinsic CdTe film is dominated by the radiative recombination of electron-hole pairs, rather than Auger recombination as reported in doped CdTe films. These new results are very important to understanding of microscopic mechanism of relaxation processes of photoexcited carriers and applications of CdTe-based optoelectronic devices.

Unified characterization for minority carrier generation lifetime of pulsed MOS structures

A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure

A New Method for Determining the Generation Characteristics of the Minority Carrier--Transient Capacitance Relaxation Spectral Analysis Method

An Improved Linear Sweep Technique of Determining Minority Carrier Generation Lifetime Suitable for Computer-aided Measurement

Study on the Computer-aided Measurement of Minority Carrier Generation Lifetime and Its Application

Application of the proportional difference time analysis to study carrier generation rate in MOS structures

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Simple Determination of the Profile of Bulk Generation Lifetime in Semiconductor

A Non-Quasi-Static Model for Tunneling FETs Based on the Relaxation Time Approximation

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Pseudo-MOSFET transient behavior: experiments, model, substrate and temperature effect

Effective Lifetimes of Minority Carriers in Time-Resolved Photocurrent and Photoluminescence of a Doped Semiconductor: Modelling of a GaInP Solar Cell

New generation width model for Si MOS C-t transient analysis

R&D of Minority Carrier Lifetime Tester for Semiconductor

Probabilistic Analysis of the Lateral Diffusion of Secondary Electrons in Multicarrier Multipactor

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Capacitance Characteristics of the Mos Structure with Fowler-Nordheim Tunneling Current

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Measuring Minority Carrier Diffusion Length Using High-Injection Scanning Photocurrent Microscopy

Carrier-Based Approach: A Generous Strategy to Develop Compact Model of Non-Classical CMOS

A Unified Carrier-Based Model for Undoped Symmetric Double-Gate and Surrounding-Gate Mosfets