Abstract:It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors.

Study on the Computer-aided Measurement of Minority Carrier Generation Lifetime and Its Application

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Unified characterization for minority carrier generation lifetime of pulsed MOS structures

A New On-chip Signal Generator for Charge-Based Capacitance Measurement Circuit

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structure

A method for measuring carrier capture cross sections of deep centers with eliminating the influence of inhomogeneous carrier distribution

Measuring Minority Carrier Diffusion Length Using High-Injection Scanning Photocurrent Microscopy

Analyse of Protection Devices' Speed Performance against ESD under CDM Using TCAD

Simple Determination of the Profile of Bulk Generation Lifetime in Semiconductor

Application of Capacitance Spectrum and the Imaginary Part of Impedance Spectrum to Study Carrier Dynamics of N,N′-diphenyl-N,N′bis(1,1′-biphenyl)-4,4′-diamine

Research on Circulator Application in Carrier Lifetime Tester

Probabilistic Analysis of the Lateral Diffusion of Secondary Electrons in Multicarrier Multipactor

New generation width model for Si MOS C-t transient analysis

A Study on the Linear Model of Minority Carrier Generation Width in Semiconductors

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Effect of injection level on measured minority diffusion length - a computer simulation

Measurement of the charge carrier mobility of polymer with the time-of-flight technique

Measurement and analysis of high speed high voltage ultrashort pulse on capacitive load