Blue light emission in nc-Si/SiO2 multilayers fabricated using layer by layer plasma oxidation
zhongyuan ma,li wang,kunji chen,wei li,lin zhang,yun bao,xiaowei wang,jun xu,xinfan huang,duan feng
DOI: https://doi.org/10.1016/S0022-3093(01)01208-X
IF: 4.458
2002-01-01
Journal of Non-Crystalline Solids
Abstract:We report a new fabrication method of a-Si:H/SiO2 multilayers by using well-controlled layer by layer plasma oxidation in plasma enhanced chemical vapor deposition (PECVD) system. The blueshift of the absorption edge and photoluminescence (PL) peak from as-deposited a-Si:H/SiO2 multilayers is observed when the a-SM sublayer thickness decreases from 3.8 to 1.5 nm. A strong room-temperature blue PL (similar to425 nm) is clearly observed, for the first time, in crystallized a-Si:H/SiO2 multilayers in addition to PL at 800 nm. In combination with Raman, TEM and PL measurements, the origin of the blue light emission is briefly discussed. (C) 2002 Elsevier Science B.V. All rights reserved.