Secondary ion mass spectrometry study on composition distribution at Ti/AlN interface

Ruifeng Yue,Youxiang Wang,Chunhua Chen,Chuanxiang Xu
1998-01-01
Abstract:A Ti film with a thickness of 200nm is grown on a polished AlN ceramic substrate at 200°C by electron beam evaporation, and annealed under high vacuum conditions. The depth profile analysis of the sample is performed by secondary ion mass spectrometry. The effects of the annealing temperature and time on the composition distribution at Ti/AlN interface are investigated. By means of Rutherford backscattering spectrometry, X-ray diffraction analysis and Ti-Al-N ternary phase diagram, it is found that the aluminide at the interface consists of Ti-Al and Ti-Al-N compounds.
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