Development of a submicron Si-tip sensor

XinFang Ding,Yunshuang He,Jianwei Shi
1998-01-01
Abstract:A new design of submicron Si-tip sensor is presented. By using the construction of AFM for reference, Si-tips and cantilevers are constructed on Si substrate by micro-fabrication and IC fabrication techniques. The thickness of cantilevers is about 6 μm and radius of tips is far less than 1 μm. By exerting voltage between the tip and substrate, the Si 3N 4 layer on the top of tips is broken through to form a temperature sensor, a mini thermocouple. Finally, leads and potting of these sensors are designed. For the thermocouple is on the top of a tip and the radius of the tip is no more than 30 nm, the sensor can be widely used in the field of biology, medical science and IC crack detection and reparation.
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