Metallization of Si 3 N 4 surface by molten salt reaction

JIAN CHEN,PAN WEI,WEIMING WANG,QILIANG HUANG,YONG HUANG

DOI: https://doi.org/10.1023/A:1018537332163

1997-01-01

Journal of Materials Science Letters

Abstract:Abstracts are not published in this journal

What problem does this paper attempt to address?

Joining of Molten Salt Reaction Metallized Si;N; to Si;N

chen jian,pan wei,zheng shiyuan,huang yong

2000-01-01

Abstract:Based on the deposition of titanium films on Si3N4 surface by molten salt reactions,the wetting behavior of a liquid CuAg eutectic alloy on the titanium metallized Si3N4 was studied,it was found that, the metallized sample can be fully wetted by the eutectic alloy. Based on this result, the joining of metallized Si3N4 to Si3N4 waJs successfully obtained and the joining technique was systematically studied. TEM observation on the interfacial structure of the joints found that Ti-Cu-Si-N phases widely existed at the interface and their possible effects on the shear strength of the joints were also discussed.
Joining of Molten Salt Reaction Metallized Si3n4 to Si3n4

J Chen,W Pan,SY Zheng,Y Huang

DOI: https://doi.org/10.3321/j.issn:1000-324x.2000.03.022

IF: 1.292

2000-01-01

Journal of Inorganic Materials

Abstract:Based on the deposition of titanium films on Si3N4 surface by molten salt reactions, the wetting behavior of a liquid CuAg eutectic alloy on the titanium metallized Si3N4 was studied, it was found that, the metallized sample can be fully wetted by the eutectic alloy. Based on this result, the joining of metallized Si3N4 to Si3N4 was successfully obtained and the joining technique was systematically studied. TEM observation on the interfacial structure of the joints found that Ti-Cu-Si-N phases widely existed at the interface and their possible effects on the shear strength of the joints were also discussed.
Revealing Salt-Expedited Reduction Mechanism for Hollow Silicon Microsphere Formation in Bi-Functional Halide Melts

Gyujin Song,Jaegeon Ryu,Jin Chul Kim,Jeong Hyeon Lee,Sungho Kim,Chongmin Wang,Sang Kyu Kwak,Soojin Park

DOI: https://doi.org/10.1038/s42004-018-0041-z

IF: 7.211

2018-01-01

Communications Chemistry

Abstract:The thermochemical reduction of silica to silicon using chemical reductants requires high temperature and has a high activation energy, which depends on the melting temperature of the reductant. The addition of bi-functional molten salts with a low melting temperature may reduce the required energy, and several examples using molten salts have been demonstrated. Here we study the mechanism of reduction of silica in the presence of aluminum metal reductant and aluminum chloride as bi-functional molten salts. An aluminum–aluminum chloride complex plays a key role in the reduction mechanism, reacting with the oxygen of the silica surfaces to lower the heat of reaction and subsequently survives a recycling step in the reaction. This experimentally and theoretically validated reaction mechanism may open a new pathway using bi-functional molten salts. Furthermore, the as-synthesized hollow porous silicon microsphere anodes show structural durability on cycling in both half/full cell tests, attributed to the high volume-accommodating ability.
INTERFACIAL REACTIONS BETWEEN Si 3N 4 AND Ti DEPOSITED BY MOLTEN SALT REACTION AND MICROSTRUCTURE OF THE PRODUCTS

pan wei,wang weiming,chen jian,huang qiliang,huang yong

1997-01-01

Abstract:The interfacial reaction mechanism between Si 3N 4 and Ti deposited by molten salt reaction method has been determined. The microstructure of the reaction products has also been investigated. It was found that the interfacial reaction products have a significant multilayer structure and the microstructures are differ with different reaction temperatures.
Titanium metallization of Si3N4 ceramics by molten salt reaction: Mechanism and interfacial structure

Pan Wei,Jian Chen,Yong Huang

DOI: https://doi.org/10.1023/A:1004850605285

IF: 4.5

2000-01-01

Journal of Materials Science

Abstract:In the present work, a new method of molten salt reaction fortitanium metallization of Si 3 N 4 has been developed. It was foundthat the decomposition of the titanium divalent compound led to theformation of a titanium coating. The thickness or weight gain persurface area of the coated sample increased with treating time andtemperature. When the treating temperature was below 1123 K, thedeposition process was controlled by the combination of interfacialreaction and the diffusion of N, Ti or Si in the coating layer, butwhen the temperature was above 1123 K, the process was only controlledby the diffusion of these elements. Field emission SEM observationrevealed the multi-layer structure of TiN and Ti 5 Si 3 at theinterface. Based on the thermodynamic calculations and otheranalysis, the possible reactions were determined.
Surface Metallization on Ceramic Materials by Molten Salt Reations

pan wei,chen jian,huang yong,cai juan

1995-01-01

Abstract:The mechanism and process of ceramic materials’ surface metallization by molten salt reactions have been investigated. By molten salt reactions, the Titanium or Zircornium films are deposited on the Si3N4 or A12O3 ceramic surface,and the thickness of these films is in the range of 2-8um. The metallic film combines strongly with the ceramic matrix,and the treated ceramic surface also has good wettability with metal. In this paper,the influences of reaction temperature,concentration of reactants and reaction time on the thickness of the metallic film on ceramic surface have also been determined. The reaction kinetics and composition of the coating layers are also studied. Keywords Surface Metallization Molten Salt Reaction Wettability
Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Cheng Fang,Ajay Agarwal,Effendi Widjaja,Marc V. Garland,She Mein Wong,Linn,Nizamudin Mohamed Khalid,Shaik Mohamed Salim,Narayanan Balasubramanian

DOI: https://doi.org/10.1021/cm900132j

IF: 10.508

2009-01-01

Chemistry of Materials

Abstract:A simple method was demonstrated to metallize silicon (Si) nanowire (NW)just by dipping it in to an aqueous deposition solution for several minutes. During the metallization process, meta I ions were reduced and deposited on the top of the Si NW (where surface Si was oxidized). The surface silicon oxide was simultaneously dissolved and removed by hydrogen fluoride (HF), so that the deposition reaction was sustainable and controllable. The deposited silver (Ag) nanoparticles (NPs) uniformly self-assembled along the Si NW and developed into a metal covering with the NW as its core. Not only Ag+ but also Cu2+, Pd2+, Co3+, Au3+, and Pt4+ were deposited to metallize the Si NW using the simplified metallization process. Applications of the new nanocomposite materials were also explored. When the resulting Ag NP/Si NW was tested as a surface-enhanced raman scattering (SERS) substrate, an extremely strong signal was observed and a detection limit of similar to 600 molecules or 200-300 Ag NPs per laser spot was reached. The significantly enhanced SERS effect appears to be associated with the close packing of the neighboring NPs that self-assemble along the highly curved NW.
Titanium metallization of Si3N4 ceramics by molten salt reaction: coating microstructure and brazing property

Pan Wei,Jianqiang Li,Jian Chen

DOI: https://doi.org/10.1016/S0040-6090(02)00950-1

IF: 2.1

2002-01-01

Thin Solid Films

Abstract:Metallization of ceramic surface by molten salt reaction is a simple and inexpensive method for improving the brazing property of ceramics. In this paper, the microstructure of the coating on the metallized Si3N4 surface produced by molten salt reactions was investigated. The results show that titanium reacted with Si3N4 to form a multi-layer structure in the coating. Based on thermodynamics calculations and thermogravimetric analysis, the possible reaction between titanium and Si3N4 was discussed. Wetting experiment proved that the metallized Si3N4 could be completely wetted by AgCu eutectic alloy. The metallized Si3N4 was brazed to 45 steel with a maximum joint strength of 226 MPa.
Interfacial Structures and Reactions Between Metallized Titanium Coating and Si3n4 Substrates

J Chen,P Wei,QL Huang,Y Huang

DOI: https://doi.org/10.1016/s0167-577x(97)00227-9

IF: 3

1998-01-01

Materials Letters

Abstract:A new metallization method of Si3N4 ceramics has been developed. It is found that during the treatment process, the titanium coating reacted with Si3N4 substrate forming a multi-layer structure in the interface. Based on the thermodynamic calculations and other analysis, the possible reactions between titanium and Si3N4 are discussed.
Ti metallization of A1N surface by molten salt reaction

Jianqiang Li,Wei Pan,Jian Chen,Minghao Fang,Zixiao Pan

IF: 1.292

2003-01-01

Journal of Inorganic Materials

Abstract:Ti metallized coating was prepared on AlN surface by the molten salt reaction method. The graded composite of TiN and AlN was observed near the interface between the coating and AlN. The result shows that the coating has the TiO/TiO1-x/TiN laminar microstructure. The wettability of AlN surface with Al is improved by metallization and the contact angle is decreased from 114.4degrees to 49.7degrees at 1000degreesC.
Electrochemical Behavior of Silicon in the (Nacl-Kcl-naf-sio 2 ) Molten Salt

Zongying Cai,Yungang Li,Xiaofeng He,Jinglong Liang

DOI: https://doi.org/10.1007/s11663-010-9393-1

2010-01-01

Abstract:The electrochemical behavior of silicon was investigated in a molten salts system including saturation silicon dioxide. Silicon was electrodeposited and MoSi2 was formed on the employed molybdenum working electrode by the diffusivities of silicon and the substrate metals. Transient electrochemical techniques such as cyclic voltammetry and chronoamperometry were used to study the reaction mechanism at the molybdenum electrode. Cyclic voltammograms showed the possibility of electrodeposition of Si at −0.64 V versus Pt reference electrode in a NaCl-KCl-NaF-SiO2 system at 1073 K (800 °C). The electrodeposition of Si is single-step charge-transfer process and the cathode process is irreversible. Chronoamperometry studies indicated that electrocrystallization of Si is controlled by progressive nucleation with a three-dimensional growth mechanism.
Ti metallization on SiC ceramics surface by molten salt reaction

Jianqiang Li,Wei Pan,Zixiao Pan,Rongti Li

2002-01-01

Rare Metal Materials and Engineering

Abstract:Continuous and dense Ti thin film on Sic surface was prepared by molten salt reaction. X-ray diffractor was employed to investigate the influence of temperature and time on the film phase composition. The result showed that Na2Ti3Cl8 phase. decreased and Ti5Si3 phase increased with the increase of temperature or time. The growth mode of thin film was identified as Volmer-Weber mode by scanning electronic microscope and the formation process of the thin film was also discussed.
A molten-salt route for synthesis of Si and Ge nanoparticles: chemical reduction of oxides by electrons solvated in salt melt

xiaofeng liu,cristina giordano,markus antonietti

DOI: https://doi.org/10.1039/c2jm15453f

2012-01-01

Journal of Materials Chemistry

Abstract:Silicon is one of the major constituents of the earth's crust and, in its elemental form, the base of many semiconductor applications, including electronics and energy conversion. Downsizing Si to the nanoscale dimension extends its application to diverse fields, which, however, is often plagued by expensive and inefficient fabrication methods. We report herein a facile chemical synthetic method for Si nanoparticles from SiO2 in a liquid environment of molten metal chlorides containing magnesium. The results show that Si nanocrystals (NCs) start to grow at 550 degrees C in the molten salt solvent and that the growth is controllable through the adjustment of the temperature, as well as the type of salt. We also show that the method can be generalized, as illustrated by the synthesis of Ge nanoparticles at a temperature of 450 degrees C. The growth of NCs is interpreted in terms of the chemical reduction of oxide by electrons solvated in the molten salts.
Ti metallization on AlN ceramics surface by molten salt reaction

Zhe Zhang,Wei Pan,Jianqiang Li

2002-01-01

Rare Metal Materials and Engineering

Abstract:Continuous and dense Ti thin film on AIN surface was prepared by molten salt reaction. X-ray diffractor was employed to investigate the influence of time and temperature and the initial K2TiF6 concentration on the film phase composition. The results showed that the fraction of Na2Ti3Cl8 decreased and TiN increased with the increase of time, temperature and initial K2TiF6 concentration. The reason of these phenomenons was discussed. The formation process of the thin film was also discussed.
Hydrogen Adsorption Induced Metallization of SiC Surface

CHANG Hao,YANG Li,WANG Li-Jun,WU Jian,DUAN Wen-Hui

DOI: https://doi.org/10.3321/j.issn:0379-4148.2005.12.006

2005-01-01

Physics

Abstract:We report our recent theoretical studies on the hydrogen-induced semiconductor surface metallization observed in β-SiC(001)-3×2 surface.We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridgebonds(i.e.,Si-H-Si complex).The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds,and donates electron to the surface conduction band.
Ti Metallization of AIN Surface by Molten Salt Reaction

li jianqiang,pan wei,chen jian,fang minghao,pan zixiao

DOI: https://doi.org/10.3321/j.issn:1000-324X.2003.05.020

2003-01-01

Abstract:Ti metallized coating was prepared on AIN surface by the molten salt reaction method. The graded composite of TiN and AIN was observed near the interface between the coating and AIN. The result shows that the coating has the TiO/TiO1-X/TiN laminar microstructure. The wettability of AIN surface with Al is improved by metallization and the contact angle is decreased from 114.4° to 49.7° at 1000℃.
Super-gravity field assisted homogeneous distribution of sub-micron eutectic Si in Al-Si alloy

Zhanghua Gan,Hao Wu,Yao Sun,Panhui Jiang,Yin Su,Chuandong Wu,Jing Liu

DOI: https://doi.org/10.1016/j.jallcom.2019.152701

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:We reported an investigation of super-gravity field assisted homogenization and refinement of eutectic Si in Al-Si alloy. Our results indicated that the super-gravity could intensify the convection and greatly promote the refining effect of the conventional modifier during solidification. The orientation relationship of the eutectic Si with respect to Al matrix is adopted [1((-)) 12](Al)//[1((-)) 12](si). The high density of submicron eutectic Si (similar to 0.5 mu m in length, similar to 0.2 mu m in width) could be achieved via the combination of the sodium salt modifier and super-gravity field, which resulted in the significant enhancement of the Vickers hardness (similar to 52%). (C) 2019 Elsevier B.V. All rights reserved.
Surface Metallization of Si3N4 Ceramics with Highperformance Silver Thick Paste Containing Bi-B-Zn Glass Frit

Yixuan Lin,Xiaoquan Qi,Guoqiang Niu,Qin Sun,Hongjun Ji,Mingyu Li,Yufeng Li

DOI: https://doi.org/10.1007/s10853-023-08604-2

IF: 4.5

2023-01-01

Journal of Materials Science

Abstract:Si3N4 is a promising material for heat dissipation substrate due to its excellent thermal conductivity and mechanical properties. However, its application is limited by the difficulties in surface metallization. In this work, surface metallization of Si3N4 ceramic substrate is realized by thick film method for the first time. Conductive silver paste containing Bi2O3-B2O3-ZnO glass frit as glass binder was prepared, and high-performance silver thick films were formed on Si3N4 ceramic surface. The mechanical and electrical properties of silver films were significantly promoted with increasing sintering temperature, and silver films with high shear strength of 23.35 MPa and low resistivity of 3.41 μΩ·cm were obtained when sintered at 600 °C. In the meanwhile, the silver films exist high reliability under thermal cycles. The bonding between the silver thick film and Si3N4 ceramic substrate was considerably enhanced as a result of interfacial reaction, forming Bi2Si2O5 phase at the interface during sintering process. The formation mechanism was discussed and it is of great significance for the interfacial design in future studies. The results suggest that thick film method is a promising technology for obtaining high-quality surface metallization for Si3N4 ceramic substrate.
Surface metallization of Si3N4 ceramics with high-performance silver thick paste containing Bi-B-Zn glass frit

Yixuan Lin,Xiaoquan Qi,Guoqiang Niu,Qin Sun,Hongjun Ji,Mingyu Li,Yufeng Li

DOI: https://doi.org/10.1007/s10853-023-08604-2

IF: 4.5

2023-06-07

Journal of Materials Science

Abstract:Si 3 N 4 is a promising material for heat dissipation substrate due to its excellent thermal conductivity and mechanical properties. However, its application is limited by the difficulties in surface metallization. In this work, surface metallization of Si 3 N 4 ceramic substrate is realized by thick film method for the first time. Conductive silver paste containing Bi 2 O 3 -B 2 O 3 -ZnO glass frit as glass binder was prepared, and high-performance silver thick films were formed on Si 3 N 4 ceramic surface. The mechanical and electrical properties of silver films were significantly promoted with increasing sintering temperature, and silver films with high shear strength of 23.35 MPa and low resistivity of 3.41 μΩ·cm were obtained when sintered at 600 °C. In the meanwhile, the silver films exist high reliability under thermal cycles. The bonding between the silver thick film and Si 3 N 4 ceramic substrate was considerably enhanced as a result of interfacial reaction, forming Bi 2 Si 2 O 5 phase at the interface during sintering process. The formation mechanism was discussed and it is of great significance for the interfacial design in future studies. The results suggest that thick film method is a promising technology for obtaining high-quality surface metallization for Si 3 N 4 ceramic substrate.

materials science, multidisciplinary
Research on synthesis and nucleation mechanism of silicon nanowire by silver catalysis in molten salt

Jiaxu Cheng,Siwei Jiang,Jiahong Fan,Jun Yao,Ning Du,Xue Li,Ding Wang,Peng Dong,Zhongren Zhou,Yingjie Zhang

DOI: https://doi.org/10.1016/j.ceramint.2023.02.258

IF: 5.532

2023-04-21

Ceramics International

Abstract:Molten salt electrolytic synthesis of silicon is identified as a potential industry method due to its thorough deoxidization of oxide and short-flow synthetic progress. However, figuring out a more efficient and sustainable strategy for the increase of the reduction process as well as the control of product morphology still needs endless research. In this study, benefiting from the high electrical conductivity of metallic silver and the easy separation of silver from silver-silicon alloys during the electrolysis of SiO 2 , metallic silver was introduced to electric-catalyze the production of silicon. Firstly, metallic silver was introduced into the silica matrix by a simple silver mirror reaction. Secondly, the mixed Ag\SiO 2 precursor was located at the cathode for molten salt electrolysis. Finally, silicon nanowires were herein achieved in molten NaCl–CaCl 2 . Mechanisms of metal Ag played during the electric-polarization process of silica and the electrochemical nucleation of silicon were further analyzed by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Field-Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The results demonstrate that Ag helps construct Si nanowires via a classic Ag-Si binary alloy-droplet process and provided quantitative guidance for the large-yield production of silicon nanowires via adding 0.08–0.17 g Ag versus 1 g SiO 2 , controlling the temperature at 850–900 °C and electrolysis voltage at 2.6–2.8 V (2.6V at first 1 h and 2.8V at last 5 h). The synthesized silicon nanowires present two types of linear structures based on two three-phase interlines (3PIs) models and a streamed long-straight nanowire is observed.

materials science, ceramics

Metallization of Si 3 N 4 surface by molten salt reaction

Joining of Molten Salt Reaction Metallized Si;N; to Si;N

Joining of Molten Salt Reaction Metallized Si3n4 to Si3n4

Revealing Salt-Expedited Reduction Mechanism for Hollow Silicon Microsphere Formation in Bi-Functional Halide Melts

INTERFACIAL REACTIONS BETWEEN Si 3N 4 AND Ti DEPOSITED BY MOLTEN SALT REACTION AND MICROSTRUCTURE OF THE PRODUCTS

Titanium metallization of Si3N4 ceramics by molten salt reaction: Mechanism and interfacial structure

Surface Metallization on Ceramic Materials by Molten Salt Reations

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Titanium metallization of Si3N4 ceramics by molten salt reaction: coating microstructure and brazing property

Interfacial Structures and Reactions Between Metallized Titanium Coating and Si3n4 Substrates

Ti metallization of A1N surface by molten salt reaction

Electrochemical Behavior of Silicon in the (Nacl-Kcl-naf-sio 2 ) Molten Salt

Ti metallization on SiC ceramics surface by molten salt reaction

A molten-salt route for synthesis of Si and Ge nanoparticles: chemical reduction of oxides by electrons solvated in salt melt

Ti metallization on AlN ceramics surface by molten salt reaction

Hydrogen Adsorption Induced Metallization of SiC Surface

Ti Metallization of AIN Surface by Molten Salt Reaction

Super-gravity field assisted homogeneous distribution of sub-micron eutectic Si in Al-Si alloy

Surface Metallization of Si3N4 Ceramics with Highperformance Silver Thick Paste Containing Bi-B-Zn Glass Frit

Surface metallization of Si3N4 ceramics with high-performance silver thick paste containing Bi-B-Zn glass frit

Research on synthesis and nucleation mechanism of silicon nanowire by silver catalysis in molten salt