Photoluminescence of Nanometer Sic Powder

XC Yang,GR Han,XB Zhang,PY Du,ZS Ding,Z Zhang

1997-01-01

Abstract:Photoluminescence of nanometer SiC powder was found firstly. By TEM, SAED, FTIR and chemical analyses, it is suggested that the quantum confinement effect of nanometer beta-SiC be responsible for the blue light and violet emission.

What problem does this paper attempt to address?

Study Of Blue Emission From Nano-Sic Powders During Rapid Thermal Annealing

Yu-zhen Liu,Wan-quan Shi,Yun-lan Huang,Shi-xiang Liu,Yi-qin Han,Zhong-qian Lu,Shou-hong Tan,Dong-liang Jiang

DOI: https://doi.org/10.1088/0256-307X/16/8/021

1999-01-01

Chinese Physics Letters

Abstract:Nanometric SiC powder was prepared by chemical vapor deposition at 1100 degrees C, and samples were subsequently treated by rapid thermal annealing at 600-1100 degrees C. The intensities of the blue photoluminescence were then measured at room temperature. The peak intensity at 2.56 eV (484 nm) rises with annealing temperature, reaching a value about 9.2 times as high at 800 degrees C, then drops very quickly at 900 degrees C. Based on the results of x-ray diffraction, infrared spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscopy, we conclude that the amounts of the twofold coordinated Si on the surface of the nanometric Sic particles play an important role in the photoluminescence intensity.
Origin of the Blue Photoluminescence from SiO2(SiC)∕SiC on Si Substrate

Zheng Chen,Yuxia Wang,Youming Zou,Jianwen Wang,Yun Li,Hongjuan Zhang

DOI: https://doi.org/10.1063/1.2360231

IF: 4

2006-01-01

Applied Physics Letters

Abstract:SiC film is prepared by heating the polystyrene/Si in 1atm ambient Ar at 1270°C. The as-grown SiC film is characterized by scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Based on the results, it is suggested that a SiO2(SiC) layer is located on the top of the as-grown SiC film. A blue photoluminescence band is observed from the as-grown sample. The photoluminescence band has the same origin as those from silica nanowires and SiC nanostructures and is associated with the near interface traps at the interface of SiO2∕SiC or SiO2∕Si.
Blue photoluminescence from SiC nanoparticles encapsulated in ZSM-5

Xiaotian Li,Changlu Shao,Shilun Qiu,Feng-Shou Xiao,Weitao Zheng,Zhenmin Liu,Osamu Terasaki

DOI: https://doi.org/10.1016/S0167-577X(00)00310-4

IF: 3

2001-01-01

Materials Letters

Abstract:Carbon ions were implanted into Si/ZSM-5 host–guest composite material at an energy of 50 keV and with a dose of 3×1017 cm−2 followed by thermal annealing in a vacuum chamber to form SiC/ZSM-5 host–guest composite material. Blue photoluminescence (PL) has been obtained from the SiC nanoparticles encapsulated in ZSM-5. The results could be explained by the quantum confinement effect.
Uv-Blue Photoluminescence from Close-Packed Sic Nanocrystal Film

J. Y. Fan,H. X. Li,Q. J. Wang,D. J. Dai,P. K. Chu

DOI: https://doi.org/10.1063/1.3556657

IF: 4

2011-01-01

Applied Physics Letters

Abstract:We observed stable photoluminescence from close-packed cubic SiC nanocrystals that are self-assembled into thin solid film. The peak wavelength shifts from blue to near UV with increasing excitation energy and follows well the quantum-confinement effect. The photoluminescence excitation spectrum indicates a 3.47 eV bandgap corresponding to a particle size of 2.3 nm. The nanocrystal film shows triple-exponential photoluminescence decay with lifetimes of 2.3, 8.5, and 36.9 ns. The results open the possibility of the solid state UV-blue light emitting by use of the SiC nanocrystals in photonics and photonics/electronics integration.
Preparation and Luminescent Properties of SiC Nanoparticles by Strong Pulse Discharge in Organic Liquid Phase Environment

Kai Du,Ronghui Wei,Gaojie Li

DOI: https://doi.org/10.1088/2053-1591/ad3525

IF: 2.025

2024-03-20

Materials Research Express

Abstract:SiC nanoparticles with relatively uniform particle distribution were successfully prepared using a continuous strong pulse discharge method using hexamethyldisilane as the organic liquid phase environment. The samples were subjected to X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and Raman spectroscopy (Raman) tests. XRD and Raman data indicate that the particle composition is mainly composed of β SiC. The electron microscope image illustrates particle-sizes ranging from 5-20 nm and existing in an agglomerated state. Further photoluminescence (PL) results indicate that the annealing temperature under vacuum conditions has a significant positive effect on the luminescence intensity.

materials science, multidisciplinary
Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

DH Chen,ZM Liao,L Wang,HZ Wang,FL Zhao,WY Cheung,SP Wong

DOI: https://doi.org/10.1016/s0925-3467(03)00061-2

IF: 3.754

2003-01-01

Optical Materials

Abstract:Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. The β-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by post-implantation annealing at 1200 °C for 30 min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050 °C for 3 h was performed to form β-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show that β-SiC nanocrystals were formed in SiO2 films, and the amount of β-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300 nm). Two distinguishable PL bands located at around 460 and 535 nm were observed in all the samples. The PL intensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017 cm−2, at which the PL intensity reaches the largest value.
Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

XL Wu,Y Gu,SJ Xiong,JM Zhu,GS Huang,XM Bao,GG Siu

DOI: https://doi.org/10.1063/1.1609642

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:Si-based β-SiC quantum dots (QDs) were fabricated for exploring efficient blue emission from β-SiC nanostructures. Microstructural observations and x-ray photoemission spectroscopy reveal that the β-SiC QDs with sizes of 5–7 nm are embedded in the SiO2 and graphite matrices, displaying a locally tetragonal symmetry. Photoluminescence spectral examinations show two narrow blue-emitting bands at 417 and 436 nm, which are determined by both quantum confinement and surface structure of the β-SiC QDs. Electron spin resonance investigation demonstrates that the photoexcited carriers partially come from the β-SiC QD core with a widened band gap, whereas the radiative recombination occurs in Si excess defect centers at the β-SiC QD surface. A theoretical calculation about electronic states caused by the vacancy defects in the gap of balls formed with excess Si atoms at the surfaces of the β-SiC QDs supports our assignment to the two blue-emitting origin.
Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

s j xu,m b yu,rusli,s f yoon,c m che

DOI: https://doi.org/10.1063/1.126382

IF: 4

2000-01-01

Applied Physics Letters

Abstract:SiC nanocrystalline films on Si substrates deposited using advanced electron-cyclotron-resonance chemical-vapor deposition exhibit intense visible light emission at room temperature under laser excitation. Continuous-wave and time-resolved photoluminescence measurements for these SiC films were carried out at room temperature. The photon energy of the dominant emission peaks is higher than the band gap of cubic SiC. Room-temperature optical absorption measurements show a clear blueshift of the band gap of the samples with a decrease of the average size of the nanoclusters, indicating an expected quantum-confinement effect. However, the emission spectra are basically independent of the size. Temporal evolution of the dominant emissions exhibits double-exponential decay processes. Two distinct decay times of similar to 200 ps and similar to 1 ns were identified, which are at least two orders of magnitude faster than that of the bound-exciton transitions in bulk 3C-SiC at low temperature. Strong light emissions and short decay times strongly suggest that the radiative recombinations may be from some direct transitions such as self-trapped excitons on the surface of the nanoclusters. (C) 2000 American Institute of Physics. [S0003-6951(00)04618-0].
Photoluminescence from Porous-Like Sic and Its Light-Induced Enhancement

ZM Chen,MB Yu,JN Wang,BH Hu

DOI: https://doi.org/10.1088/0256-307x/16/4/024

1999-01-01

Chinese Physics Letters

Abstract:Intense photoluminescence (PL) from porous-like SiC has been observed at room temperature. The samples were prepared by electrochemical anodization from nanocrystalline SiC thin films grown on Si (100) substrates in hot filament chemical vapor deposition. It has been found that ii light-induced enhancement of the PL intensity will take place if the incident light beam from an He-Cd laser (325 nm, 10 mW) is employed for the excitation. Blue-shift of the PL peak energy from about 1.9 eV of as-anodized samples to about 2.1 eV and an accompanied spectral widening have also been observed for a long enough irradiation time. However, the novel effects have not been observed at low temperature. Origin of the light-induced change is suggested to be related to some light-induced metastable defects.
Optical Emission from C60-molecule-coupled Si Nanocrystallites

XL Wu,MX Liao,SS Deng,GG Siu

DOI: https://doi.org/10.1063/1.1760080

2004-01-01

Abstract:Using C60 molecule as a kind of surface-passivated agent to modify the electronic structure of Si nanocrystallites in porous silicon, we disclose that this kind of C60/nanocrystalline Si coupling system can show a strong blue emission at approximately 460 nm when stored in air for more than one year. After a full characterization of the photoluminescence properties, we propose a luminescent center in the SiOx layer at the surface of a Si nanocrystallite. It is a pair consisting of an oxygen vacancy and an interstitial oxygen. The interstitial oxygen also forms a peroxy linkage with a neighboring lattice oxygen. Radiative recombination of carriers photogenerated from Si nanocrystallite cores in the luminescent centers results in the observed blue photoluminescence. Neutron irradiation experiments support our assignment of the blue emission mechanism. This work improves the understanding of the origin of blue emission from silicon/oxygen-related nanostructured materials.
Uv and Blue Light Emission from Sic Nanoclusters in Annealed Amorphous Sic Alloys

Jun Xu,Jiaxin Mei,Yunjun Rui,Deyuan Chen,Zhanhong Cen,Wei Li,Zhongyuan Ma,Ling Xu,Xinfan Huang,Kunji Chen

DOI: https://doi.org/10.1016/j.jnoncrysol.2006.01.053

IF: 4.458

2006-01-01

Journal of Non-Crystalline Solids

Abstract:Photoluminescence characteristics of hydrogenated amorphous SiC thin films prepared with various gas ratio R=[CH4]/[SiH4] were investigated. Red light emission (600–800nm) was observed at room temperature from as-deposited samples. The changes of chemical bonding configurations and structures of amorphous SiC alloys were monitored before and after thermal annealing at 500°C. An intense UV and blue light emission (300–500nm) can be obtained from annealed SiC films prepared with R>10. Raman and FT-IR absorption measurements demonstrated the formation and enhancement of 4H-SiC clusters in annealed films which may results in the UV and blue light emission from annealed SiC samples.
Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

ZM Chen,JP Ma,JN Wang,G Lu,MB Yu,TM Lei,WK Ge

DOI: https://doi.org/10.1088/0256-307x/17/10/025

2000-01-01

Abstract:Intense wide-band photoluminescence (PL) with high stability to ultraviolet (UV) light irradiation has been observed in a wide temperature range from a polycrystalline SIC sintered from graphite and melt Si at high temperature over 1500 degreesC. X-ray diffraction results showed that the sintered material consists of mainly cubic and 6H-SiC crystallites oriented randomly and a small amount of graphite with (002) preferential orientation. PL spectra of the samples were measured under excitation of the incident UV light beam from an He-Cd laser (325 nm. 10 mW) in the temperature range from 10 to 300 K. The PL spectra were found to be a single wide-land centered around 2.2 eV at room temperature and to be divided into a much more intensive blue band and a less intensive red band st low temperature. The low temperature PL bands consist of several luminescence peaks that change in intensities relatively with variation of temperature.
Catalytic Synthesis and Growth Mechanism of SiC@SiO2 Nanowires and Their Photoluminescence Properties

Kai Chen,Minghao Fang,Zhaohui Huang,Juntong Huang,Yan-gai Liu

DOI: https://doi.org/10.1039/c3ce41581c

IF: 3.756

2013-01-01

CrystEngComm

Abstract:SiC@SiO2 nanowires were synthesized on a Si substrate by thermal evaporation method with an iron nitrate catalyst. The as-grown nanowires were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and photoluminescence spectroscopy at room temperature. Characterization indicated that the nanowires were composed of a crystalline SiC core with a thin amorphous SiO2 shell. The typical SiC core diameter was 50–100 nm, whereas the SiO2 shell thickness was 5–10 nm and they had a length of several hundreds of micrometers. A combined vapor–liquid–solid (VLS) base-growth and vapor–solid (VS) tip-growth mechanism is proposed for the growth mode of the as-grown SiC@SiO2 nanowires. The intensive blue-green emission properties of the core-shell SiC-SiO2 nanowires are of significant interest for their potential blue-green emitting device applications.
Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Xiuchun Yang,Gaorong Han,Piyi Du,ZiShang Ding,Guozhi Zhou

1998-01-01

Abstract:SiC ultrafine powders have been synthesized by a chemical vapor reaction of SiH4-C2H2-H2 system during 1423-1673 K. The powders were analyzed by transmission electron microscope (TEM), selected area electron diffraction (SEAD), Fourier transform infrared spectroscope (FTIS), BET, X-ray diffraction (XRD), high resolution electron microscope (HREM) and chemical analyses. The results show that the highly pure and ultrafine powder can be obtained by changing reaction temperature and C2H4/SiH4 mole ratio. The excess silicon exists in the powder synthesized over 1623 K. The single-phase-SiC exists in the powder synthesized at 1623 K. The average particle size of the powder synthesized at 1623 is about 11 nm, and the powder contains 97.8 wt%SiC, 1.3 wt%O, 0.9 wt%C. Free Si has important effect on the particle size of powders.
Light Emission from Si Nanoclusters Formed at Low Temperatures

XD Pi,OHY Zalloum,T Roschuk,J Wojcik,AP Knights,P Mascher,PJ Simpson

DOI: https://doi.org/10.1063/1.2183813

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Photoluminescence (PL) from amorphous Si nanoclusters (Si-ncls) formed by thin-film deposition via electron-cyclotron resonance plasma-enhanced chemical vapor deposition followed by annealing at temperatures ⩽875°C has been investigated. We find that Si-ncls grow very slowly after their initial nucleation at low temperatures. An increase in the size of Si-ncls, which can be controlled by the annealing temperature, induces a redshift in the Si-ncl PL peak. While the emitted optical power is more than 100 times smaller than that of Si nanocrystals formed in an identically deposited film, it is increased by a factor of up to approximately four times following hydrogen passivation. The incorporation of hydrogen causes a redshift in the PL peak position, suggesting a partial hydrogenation induced bond distortion of the Si-ncls. This redshift decreases with increasing hydrogen ambient annealing temperature.
Ultrafast Blue Light Emission from SiC Nanowires

Fuli Zhao,Hongxin Chen,S. Z. Deng,Ning Xu,Tianqing Jia,Zhizhan Xu

IF: 2.56

2007-01-01

Chinese Optics Letters

Abstract:Cubic silicon carbide (SiC) nanowires are synthesized in a catalyst-assisted process. The nanowires with diameter of ~40 nm exhibit strong blue light emission at room temperature under ultraviolet (UV) femtosecond laser excitation. The photon energy of peak emission is higher than the energy bandgap of cubic SiC which shows involvement of quantum confinement effect. The ultrafast fluorescence is deconvoluted by Monte-Carlo method. The results show two ultrafast decay processes whose lifetimes are about 26 and 567 ps respectively. The mechanisms of such ultrafast processes are discussed.
Catalytic Synthesis and Photoluminescence of Needle-Shaped 3c–sic Nanowires

DH Feng,TQ Jia,X Li,ZZ Xu,J Chen,SZ Deng,ZS Wu,NS Xu

DOI: https://doi.org/10.1016/j.ssc.2003.08.025

IF: 1.934

2003-01-01

Solid State Communications

Abstract:Needle-shaped 3C–SiC nanowires were grown from commercially available SiC powders in a thermal evaporation process with iron as catalyst. A strong broad photoluminescence peak located around 450 nm was observed at room temperature, which may be ascribed to quantum size effects of nanomaterials. Needle-shaped 3C–SiC nanowires may have great potential applications such as blue-green light-emitting diodes and display devices.
Highly Efficient and Stable Photoluminescence from Silicon Nanowires Coated with Sic

XT Zhou,RQ Zhang,HY Peng,NG Shang,N Wang,I Bello,CS Lee,ST Lee

DOI: https://doi.org/10.1016/s0009-2614(00)01145-3

IF: 2.719

2000-01-01

Chemical Physics Letters

Abstract:A reaction of silicon nanowires (SiNW) with methane and hydrogen has been performed to produce a thin coating layer of cubic silicon carbide (beta -SIC) using an ion beam deposition technique. High resolution transmission electron microscopy (HRTEM) showed that silicon oxide shells originally cladding the as-grown SiNW were removed and replaced by a thin layer of nano-sized crystals of beta -SiC. This has led to stable photoluminescence (PL) observed from the SiC-coated SiNW with high efficiency almost tripled as compared with that before SiC coating. (C) 2000 Elsevier Science B.V. All rights reserved.
Syntheses and photoluminescence properties of SiC nanowires with different colors

Zesheng Pan,Chaocheng Weng,Mingxia Gao,Wenxin Lin,Linhui Gao,Hongliang Zhu,Jianjun Chen

DOI: https://doi.org/10.1016/j.jallcom.2020.155768

IF: 6.2

2020-11-01

Journal of Alloys and Compounds

Abstract:Silicon carbide nanowires (SiC NWs) with different colors (green, blue and white) were synthesized by sol-gel carbothermal reduction method. The chemical composition and morphology of SiC NWs were investigated by multiple characterization methods. It shows that both green and blue products are 3C–SiC NWs and the white product is SiC/SiO2 cable-structure NWs. The effects of the SiO2/C molar ratio of raw materials and the reaction temperature on the fabrication of green, blue and white SiC NWs were investigated. It is found that green SiC NWs tend to generate at high temperature (1600 °C) and low SiO2/C molar ratio (1:1). And blue SiC NWs are more likely to form at relatively low temperature (1550 °C) and high SiO2/C molar ratio (2:1). In addition, the white SiC/SiO2 cable-structure NWs were synthesized with high SiO2/C molar ratio and low temperature (1500 °C). The two-step growth mechanism was proposed to interpret the growth process. The photoluminescence properties and band gaps of the nanowires were also investigated. It shows that as the size of SiC reduces into nanometer, its band gap enlarges, which leads to the blue-shift of light emission. The discrepancy in emission spectra was assumed to be related to different thickness of their SiO2 coatings. And the different thickness of SiO2 coatings results in the multicolor discrepancy of SiC nanowires.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

JY Fan,XL Wu,R Kong,T Qiu,GS Huang

DOI: https://doi.org/10.1063/1.1914962

IF: 4

2005-01-01

Applied Physics Letters

Abstract:We report optical emission of SiC nanocrystallite films, which clearly shows the quantum confinement effect. Bulk polycrystalline 3C-SiC was first electrochemically etched and then the fabricated porous silicon carbide was ultrasonically treated in water or toluene suspension to disperse into colloidal nanoparticles. Transmission electron microscopy images clearly show that the colloidal nanoparticles have 3C-SiC lattice structure with sizes varying from about 6nm down to below 1nm. The suspension of 3C-SiC nanocrystallites exhibits ultrabright emission with wavelengths ranging from 400to520nm when the excitation wavelength varies from 250to480nm, in accordance with the quantum confinement effect. By adding polystyrene to the toluene suspension containing SiC nanoparticles and coating the mixing solution onto a Si wafer, we obtain the SiC∕polystyrene films that luminesce.

Photoluminescence of Nanometer Sic Powder

Study Of Blue Emission From Nano-Sic Powders During Rapid Thermal Annealing

Origin of the Blue Photoluminescence from SiO2(SiC)∕SiC on Si Substrate

Blue photoluminescence from SiC nanoparticles encapsulated in ZSM-5

Uv-Blue Photoluminescence from Close-Packed Sic Nanocrystal Film

Preparation and Luminescent Properties of SiC Nanoparticles by Strong Pulse Discharge in Organic Liquid Phase Environment

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Photoluminescence from Porous-Like Sic and Its Light-Induced Enhancement

Optical Emission from C60-molecule-coupled Si Nanocrystallites

Uv and Blue Light Emission from Sic Nanoclusters in Annealed Amorphous Sic Alloys

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Catalytic Synthesis and Growth Mechanism of SiC@SiO2 Nanowires and Their Photoluminescence Properties

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Light Emission from Si Nanoclusters Formed at Low Temperatures

Ultrafast Blue Light Emission from SiC Nanowires

Catalytic Synthesis and Photoluminescence of Needle-Shaped 3c–sic Nanowires

Highly Efficient and Stable Photoluminescence from Silicon Nanowires Coated with Sic

Syntheses and photoluminescence properties of SiC nanowires with different colors

Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films