Single-step Etched Grating Couplers for Silicon Nitride Loaded Lithium Niobate on Insulator Platform
Xu Han,Yongheng Jiang,Andreas Frigg,Huifu Xiao,Pu Zhang,Andreas Boes,Thach G. Nguyen,Jianhong Yang,Guanghui Ren,Yikai Su,Arnan Mitchell,Yonghui Tian
DOI: https://doi.org/10.1063/5.0055213
IF: 5.6
2021-01-01
APL Photonics
Abstract:Dielectrically loaded thin-film lithium niobate (LiNbO3) on insulator (LNOI) platforms have enabled a range of photonic integrated circuit components, such as high-speed optical modulators, switches, and nonlinear devices, while avoiding the direct etching of the LiNbO3 thin film. Silicon nitride (Si3N4) is one of the most attractive dielectric loading materials as it has a similar refractive index and transparency window to LiNbO3 and can be deposited and patterned by mature fabrication processes. The patterning of Si3N4 opens the opportunity to fabricate grating couplers in the same fabrication step, providing efficient optical interfaces for wafer-scale testing. In this paper, we investigate and demonstrate single-step etched grating couplers on a Si3N4-LNOI (X-cut) platform. The grating couplers (straight and curved) are designed and fabricated for TE-polarized modes along the Y and Z crystallographic directions, considering the LiNbO3 crystal’s birefringence. The experimentally demonstrated coupling losses are as low as 4.02 and 4.24 dB along the crystallographic Y and Z directions, respectively. The corresponding peak wavelengths are 1609 and 1615 nm, respectively. The measured 3-dB bandwidths are wider than 70 nm for both crystallographic directions. We also numerically investigated the influence of fabrication variations and the fiber angle on the transmission. To the best of our knowledge, this work is the first demonstration of grating couplers with different light propagation directions on the Si3N4 loaded LNOI platform.