Abstract:Carbon nitride films were deposited on Co/Ni-covered Si(100) wafers at room temperature using a dc glow discharge plasma beam deposition method. The glow discharge has been carried out in a mixed gas of nitrogen and methane in different relative proportions and has maintained stable in an glow operating pressure around 30Torr. Scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy were carried out to investigate morphology, composition, structure and crystallinity of the as-deposited films. In scanning electron microscopy images, the as-deposited films consist of crystallites with an average size of about 20–30nm, and an interesting cauliflower structure is found in the center of a prepared sample. The X-ray diffraction results indicate that β- and graphitic-C3N4 crystallites and CNx or carbon nanotubes exist in the as-deposited films. The X-ray photoelectron spectroscopy results show that the [N]/[C] ratios are 0.34–0.46 and the peak shapes and intensities in the N 1s and C 1s regions are similar to those previously reported by our research group using the atom-beam assisted pulsed laser deposition method. The Raman spectra show two separated characteristic bands: a disordered D band (around 1323cm−1) that indicates the presence of C3N4 components, and a graphitic G band (around 1593cm−1). The impacts of the substrate temperatures, nitrogen/methane pressure ratios and Co/Ni layer thicknesses on the properties of the as-deposited films are discussed.

Synthesis of high quality crystalline C-N films on silicon

Synthesis and characterization of C3N4 crystalline films on silicon

Preparation of Crystalline Carbon Nitride Films on Silicon Substrate by Chemical Vapor Deposition

Crystalline Carbon Nitride Films Prepared by Microwave Plasma Chemical Vapour Deposition

Ion beam synthesis of C-N crystalline film and its analysis

Structure analysis of C-N thin films prepared by hot-filament chemical vapor deposition

Synthesis and Characterization of Crystalline Films on Silicon

Synthesis of Crystalline Carbon Nitride by Chemical Vapor Deposition

C3N4 Film Deposited by Synchrotron Radiation Assisted CVD

Carbon Nitride Films Synthesized By Combined Ion-Beam And Laser-Ablation Processing

Crystalline Carbon Nitride Films Formation by Chemical Vapor Deposition

Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

Amorphous CNx films prepared by electrochemical deposition

Deposition of crystalline C3N4 films via microwave plasma chemical vapour deposition

Characteristics of Carbon Nitride Films Synthesized by Single-Source Ion Beam Enhanced Deposition System

C3N4 Films Prepared by Hot Filament Assisted RF Plasma CVD

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

Cn(X) Films Deposited By Laser-Ablation Of Graphite Under Low-Energy Nitrogen-Ion Beam Bombardment

Attempt to Deposit Carbon Nitride Films by Electrodeposition from an Organic Liquid

Synthesis of Nitrogenated Carbon Films by Cathodic Electrodeposition at the Solid–liquid Interface

Synthesis of Nanocrystalline Carbon Nitride Films by Glow Discharge Plasma Beam Deposition