Abstract:We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 μm band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 μm cavity length and 15 μm stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A −1 , and a differential resistance of 1.31 Ω at ∼1.31 μm wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 μm wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.

Fabrication of 1.3 Μm InGaAsP/InP Gain-Coupled DFB Lasers with Absorptive Grating Using LPE Technique

Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

InP-based optoelectronic devices for optical fiber communications

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

GaAlAs/GaAs multiquantum well gain-coupled distributed feedback lasers with absorptive gratings all grown by MBE

Ingaas Inp Gain-Coupled Distributed Feedback Laser with A Corrugated Active Layer

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

1.55 μm InGaAsP/InP partially gain-coupled DFB laser/electroabsorption modulator integrated device

High T/sub 0/ 1.3 /spl Mu/m AlGaInAs/InP Distributed Feedback Laser with Complex-Coupled Grating Growth by LP-MOCVD

Low threshold 1.3μm InGaAsP/InP strained compensated multi-quantum well DFB laser grown by LP-MOCVD

High-power, High-Spectral-purity GaSb-based Laterally Coupled Distributed Feedback Lasers with Metal Gratings Emitting at 2 Μ M

CO2 laser-written long-period fiber grating with a high diffractive order cladding mode near the turning point

Technique fabricating long period fiber gratings by high-frequency CO2 laser pulses

Distributed feedback semiconductor lasers and their application in photonic integrated devices

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

1.55μm InGaAsP/InP strained MQN-coupled DFB laser with an improved injection-carrier grating

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

Fabrication of Ridge Waveguide of 808 Nm GaAs-based Laser Diodes by Wet Chemical Etching