Abstract:Half-wave phase shifts were fabricated in the center of second-order GaAs gratings, for use in surface-emitting, horizontal-cavity, semiconductor diode lasers (λ=0.98 μm). Incorporating such gratings in diode lasers with distributed-feedback (DFB) active regions and distributed Bragg reflectors (DBRs) is found to provide surface-normal, single-lobe beam emission, as predicted by theory. InGaAs/AlGaAs/InGaP, two-quantum-well structures are employed. A 500-μm-long GaAs/Au second-order grating with half-wave phase shift represents the DFB region, which provides feedback and unidirectional light outcoupling. GaAs/SiO2/Au, 500-μm-long, second-order gratings are the DBR regions, on either side of the DFB region, which provide both frequency-selective feedback as well as unidirectional outcoupling. Lateral-mode control is achieved via a 2.5-μm-wide ridge waveguide. Surface emission is obtained through a 80-μm-wide window stripe in the metallization on the substrate n-side. Single-frequency lasing in an orthonormally emitted, single-lobe, diffraction-limited beam is obtained to 3× threshold under pulsed-drive conditions (200 ns wide pulses, 1 kHz repetition rate).

Ingaas Inp Gain-Coupled Distributed Feedback Laser with A Corrugated Active Layer

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Fabrication of 1.3 Μm InGaAsP/InP Gain-Coupled DFB Lasers with Absorptive Grating Using LPE Technique

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

High-Performance Gain-Coupled Distributed-Feedback Semiconductor-Lasers with Absorptive Gratings

Laterally Coupled Distributed Feedback Laser with Dry-Etched Deep Gratings

Gain-Coupled Dfb Semiconductor-Lasers

A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

GaAs/AlGaAs tunable laser using Fabry-Perot filters based on half-wave coupled lossy deep etched trenches

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

Fabrication of GaAlAs/GaAs gain-coupled distributed feedback lasers using the nature of MBE

Facet Reflection Independent, Single Longitudinal Mode Oscillation in a GaAlAs/GaAs Distributed Feedback Laser Equipped with a Gain-Coupling Mechanism

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Inas/Ingaasp/Inp Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Short Cavity DBR Laser Using Vertical Groove Gratings for Large-Scale Photonic Integrated Circuits

1.5 μm in GaAsP/InP strained MQW gain-coupled DFB laser with an improved periodically modulated injection-carrier grating

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator