Abstract:Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current (I peak ) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage (V th ) of on/off-FET. In this paper, we have demonstrated the effect of V th adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = 0.465 mm 2 ) show forward voltage drop (V F ) of 1.25 V at 100 A/cm 2 and I peak of 290 A and di/dt of 5.8 kA/µs at V A = 800 V. While these characteristics are unaltered by V th adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of 100 A/cm 2 when the V th adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

Investigation of triple diffusion process for MOS-controlled thyristor

An Optimization of Triple Diffusion Process for MCT with High di/dt

Analysis of 4500 V double trench MOS controlled thyristor

Device mechanism analysis and fabrication of new structural MOS controlled thyristors

Simulation and Analysis of MCT Device Based on VLD Technology

A comparative investigation of the MCST with MCT and IGBT

A Novel MCT Structure for Power Integrated Cirluits

Analysis of N-Channel MOS-controlled Thyristors

A New Single Gate MOS Controlled Thyristor with Current Saturation and Large SOA

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

A Novel Single Gate MOS Controlled Current Saturated Thyristor

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor)

Design and Characterization of High $di/dt$ CS-MCT for Pulse Power Applications

Modeling, Fabrication and Test Results of a MOS Controlled Thyristor — MCT ‐ with high controllable current density

The Optimization and Fabrication of High Electron Mobility Transistors Integrated with Microstructure

The SuperJunction MOS-controlled thyristor (SJ-MCT) with low power loss for high-power switching applications

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

The P-Mos Controlled Lateral Thyristor: A Mos Controllable Thyristor Suitable for Integration

High Channel Density Dual Operation Mode Mos-Controlled Thyristor with Superior Current Saturation Capability

A Study on Ionization Damage Effects of Anode-Short MOS-Controlled Thyristor

Experimentally demonstrate a cathode short MOS-controlled thyristor (CS-MCT) for single or repetitive pulse applications